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DSEI30-12A [IXYS]

Fast Recovery Epitaxial Diode (FRED); 快速恢复外延二极管（ FRED ）
DSEI30-12A
型号： DSEI30-12A
厂家： IXYS CORPORATION    IXYS CORPORATION
描述：

Fast Recovery Epitaxial Diode (FRED)
快速恢复外延二极管（ FRED ）

二极管
文件： 总2页 (文件大小：42K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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DSEI 30 IFAVM = 26 A  
VRRM = 1200 V  
Fast Recovery  
Epitaxial Diode (FRED)  
trr  
= 40 ns  
TO-247 AD  
C
A
VRSM  
V
VRRM  
V
Type  
C
A
1200  
1200  
DSEI 30-12A  
C
A = Anode, C = Cathode  
Symbol  
IFRMS  
Test Conditions  
Maximum Ratings  
Features  
ꢀ
International standard package  
JEDEC TO-247 AD  
TVJ = TVJM  
70  
26  
375  
A
A
A
D1  
IFAVM  
IFRM  
ꢀ
TC = 85°C; rectangular, d = 0.5  
tP < 10 µs; rep. rating, pulse width limited by TVJM  
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
ꢀ
Planar passivated chips  
Very short recovery time  
Extremely low switching losses  
Low IRM-values  
Soft recovery behaviour  
Epoxy meet UL 94V-0  
IFSM  
TVJ = 45°C; t = 10 ms (50 Hz), sine  
200  
210  
A
A
t = 8.3 ms(60 Hz), sine  
TVJ = 150°C; t = 10 ms (50 Hz), sine  
185  
195  
A
A
t = 8.3 ms(60 Hz), sine  
I2t  
TVJ = 45°C  
t = 10 ms (50 Hz), sine  
t = 8.3 ms(60 Hz), sine  
200  
180  
A2s  
A2s  
Applications  
TVJ = 150°C; t = 10 ms (50 Hz), sine  
170  
160  
A2s  
A2s  
t = 8.3 ms(60 Hz), sine  
ꢀ
Antiparallel diode for high frequency  
switching devices  
Anti saturation diode  
Snubber diode  
Free wheeling diode in converters  
and motor control circuits  
Rectifiers in switch mode power  
supplies (SMPS)  
Inductive heating and melting  
TVJ  
TVJM  
Tstg  
-40...+150  
150  
-40...+150  
°C  
°C  
°C  
ꢀ
ꢀ
ꢀ
Ptot  
Md  
TC = 25°C  
138  
W
ꢀ
Mounting torque with screw M3  
Mounting torque with screw M3.5  
0.45/4  
0.55/5  
Nm/lb.in.  
Nm/lb.in.  
ꢀ
Weight  
Symbol  
IR  
6
g
ꢀ
Uninterruptible power supplies (UPS)  
Ultrasonic cleaners and welders  
ꢀ
Test Conditions  
Characteristic Values  
max.  
typ.  
Advantages  
TVJ = 25°C  
TVJ = 25°C  
TVJ = 125°C VR = 0.8 • VRRM  
VR = VRRM  
VR = 0.8 • VRRM  
750  
250  
7
µA  
µA  
mA  
ꢀ
High reliability circuit operation  
Low voltage peaks for reduced  
ꢀ
protection circuits  
Low noise switching  
Low losses  
Operating at lower temperature or  
VF  
IF = 30 A;  
TVJ = 150°C  
TVJ = 25°C  
2.2  
2.55  
V
V
ꢀ
ꢀ
VT0  
rT  
For power-loss calculations only  
TVJ = TVJM  
1.65  
18.2  
V
mΩ  
ꢀ
space saving by reduced cooling  
RthJC  
RthCK  
RthJA  
0.9  
K/W  
K/W  
K/W  
0.1  
35  
60  
18  
trr  
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V; TVJ = 25°C  
40  
16  
ns  
A
IRM  
VR = 540 V; IF = 30 A; -diF/dt = 240 A/µs  
L ≤ 0.05 µH; TVJ = 100°C  
ꢀ IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5  
Data according to IEC 60747  
IXYS reserves the right to change limits, test conditions and dimensions  
© 1999 IXYS All rights reserved  
D1 - 20  
DSEI 30, 1200 V  
70  
A
6
µC  
5
50  
A
TVJ=100°C  
VR= 540V  
TVJ=100°C  
VR= 540V  
60  
40  
max.  
IF=30A  
50  
40  
30  
20  
10  
0
IRM  
IF=30A  
IF=60A  
IF=30A  
IF=15A  
4
3
2
1
0
IF=60A  
IF=30A  
IF=15A  
IF  
Qr  
TVJ=25°C  
TVJ=100°C  
TVJ=150°C  
30  
20  
10  
0
typ.  
max.  
typ.  
0
1
2
3
4
1
10  
100  
1000  
A/µs  
V
0
200  
-diF/dt  
400 600  
A/µs  
VF  
-diF/dt  
Fig. 1 Forward current  
versus voltage drop.  
Fig. 2 Recovery charge versus -diF/dt.  
Fig. 3 Peak reverse current versus  
-diF/dt.  
D1  
1.4  
1.2  
1.0  
1.0  
60  
V
1200  
ns  
TVJ=100°C  
µs  
VR=540V  
50  
40  
30  
20  
10  
0
1000  
0.8  
VFR  
IF=30A  
IF=60A  
IF=30A  
IF=15A  
max.  
IRM  
800  
600  
trr  
Kf  
VFR  
0.6  
0.4  
0.2  
0.0  
tfr  
0.8  
0.6  
QR  
400  
200  
0.4  
0.2  
0.0  
tfr  
typ.  
TVJ=125°C  
IF=30A  
0
A/µs  
600  
A/µs  
0
40  
80  
120 °C 160  
0
200  
400  
600  
0
200  
400  
TJ  
-diF/dt  
diF/dt  
Fig. 4 Dynamic parameters versus  
junction temperature.  
Fig. 5 Recovery time versus -diF/dt.  
Fig. 6 Peak forward voltage  
versus diF/dt.  
1.0  
K/W  
0.8  
Dim.  
Millimeter  
Min. Max. Min.  
Inches  
Max.  
Dimensions  
A
B
19.81 20.32 0.780 0.800  
20.80 21.46 0.819 0.845  
ZthJC  
0.6  
C
D
15.75 16.26 0.610 0.640  
3.55 3.65 0.140 0.144  
E
F
4.32 5.49 0.170 0.216  
5.4  
6.2 0.212 0.244  
0.4  
0.2  
0.0  
G
H
1.65 2.13 0.065 0.084  
-
4.5  
-
0.177  
J
K
1.0  
1.4 0.040 0.055  
10.8 11.0 0.426 0.433  
L
M
4.7  
0.4  
5.3 0.185 0.209  
0.8 0.016 0.031  
N
2.2 2.54 0.087 0.102  
s
0.001  
0.01  
0.1  
1
10  
t
Fig. 7 Transient thermal impedance junction to case.  
© 1999 IXYS All rights reserved  
D1 - 21  

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