DSEI30-10A [IXYS]
Fast Recovery Epitaxial Diode (FRED); 快速恢复外延二极管（ FRED ）
| 型号： | DSEI30-10A |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Fast Recovery Epitaxial Diode (FRED) |
| 文件： | 总2页 (文件大小：85K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Fast Recovery
DSEI 30 IFAVM = 30 A
Epitaxial Diode (FRED)
VRRM = 1000 V
trr
= 35 ns
TO-247 AD
C
A
VRSM
V
VRRM
V
Type
1000
1000
DSEI 30-10A
C
C
A
Symbol
IFRMS
Test Conditions
Maximum Ratings
A = Anode, C = Cathode
TVJ = TVJM
70
30
A
A
A
IFAVM
IFRM
¬
TC = 85°C; rectangular, d = 0.5
tP < 10 µs; rep. rating, pulse width limited by TVJM
375
IFSM
TVJ = 45°C; t = 10 ms (50 Hz), sine
200
210
A
A
t = 8.3 ms (60 Hz), sine
Features
TVJ = 150°C; t = 10 ms (50 Hz), sine
185
195
A
A
t = 8.3 ms (60 Hz), sine
l
International standard package
JEDEC TO-247 AD
∫i2dt
TVJ = 45°C
t = 10 ms (50 Hz), sine
t = 8.3 ms (60 Hz), sine
200
180
A2s
A2s
l
l
l
l
l
l
Planar passivated chips
Very short recovery time
Extremely low switching losses
Low IRM-values
Soft recovery behaviour
Epoxy meet UL 94V-0
TVJ = 150°C; t = 10 ms (50 Hz), sine
170
160
A2s
A2s
t = 8.3 ms (60 Hz), sine
TVJ
TVJM
Tstg
-40...+150
150
-40...+150
°C
°C
°C
Ptot
Md
TC = 25°C
138
W
Applications
Mounting torque with screw M3
Mounting torque with screw M3.5
0.45/4
0.55/5
Nm/lb.in.
Nm/lb.in.
l
Antiparallel diode for high frequency
switching devices
Anti saturation diode
Snubber diode
Free wheeling diode in converters
and motor control circuits
Rectifiers in switch mode power
supplies (SMPS)
Inductive heating and melting
Weight
Symbol
IR
6
g
l
l
l
Test Conditions
Characteristic Values
max.
typ.
l
T
= 25°C
TVVJJ = 25°C
TVJ = 125°C VR = 0.8 • VRRM
V
= VRRM
750
250
7
µA
µA
mA
VRR = 0.8 • VRRM
l
l
Uninterruptible power supplies (UPS)
Ultrasonic cleaners and welders
l
VF
IF = 30 A;
TVJ = 150°C
TVJ = 25°C
2
V
V
2.4
V
For power-loss calculations only
TVJ = TVJM
1.5
12.5
V
mΩ
rTT0
Advantages
l
High reliability circuit operation
Low voltage peaks for reduced
RthJC
RthCK
RthJA
0.9
K/W
K/W
K/W
l
0.25
35
50
18
protection circuits
Low noise switching
Low losses
Operating at lower temperature or
l
trr
IF = 1 A; -di/dt = 100 A/µs; VR = 30 V; TVJ = 25°C
35
16
ns
A
l
l
IRM
VR = 540 V; IF = 30 A; -diF/dt = 240 A/µs
L ≤ 0.05 µH; TVJ = 100°C
space saving by reduced cooling
¬ IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5
Data according to DIN/IEC 747
IXYS reserves the right to change limits, test conditions and dimensions
93021B
21
© 1997 IXYS All rights reserved
DSEI 30, 1000 V
Fig. 1 Forward current
versus voltage drop.
Fig. 2 Recovery charge versus -diF/dt.
Fig. 3 Peak reverse current versus
-diF/dt.
Fig. 4 Dynamic parameters versus
junction temperature.
Fig. 5 Recovery time versus -diF/dt.
Fig. 6 Peak forward voltage versus
-diF/dt.
Dimensions
Dim.
Millimeter
Min. Max. Min.
Inches
Max.
A
B
19.81 20.32 0.780 0.800
20.80 21.46 0.819 0.845
C
D
15.75 16.26 0.610 0.640
3.55 3.65 0.140 0.144
E
F
4.32 5.49 0.170 0.216
5.4
6.2 0.212 0.244
G
H
1.65 2.13 0.065 0.084
-
4.5
-
0.177
J
1.0
1.4 0.040 0.055
K
10.8 11.0 0.426 0.433
L
M
4.7
0.4
5.3 0.185 0.209
0.8 0.016 0.031
N
1.5 2.49 0.087 0.102
Fig. 7 Transient thermal impedance junction to case.
© 1997 IXYS All rights reserved
22
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