DSEI2X61-12 [IXYS]
Fast Recovery Epitaxial Diode (FRED); 快速恢复外延二极管（ FRED ）
| 型号： | DSEI2X61-12 |
| 厂家： | 
IXYS CORPORATION |
| 描述： | Fast Recovery Epitaxial Diode (FRED) |
| 文件： | 总2页 (文件大小：138K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DSEI 2x61 IFAVM = 2x52 A
VRRM = 1200 V
Fast Recovery
Epitaxial Diode (FRED)
trr
= 40 ns
VRSM
V
VRRM
V
Type
1200
1200
DSEI 2x 61-12P
D5
Symbol
IFRMS
Conditions
Maximum Ratings (per diode)
Features
• 2 independent FRED in 1 package
• Isolation voltage 3000 V~
• Planar passivated chips
• Leads suitable for PC board soldering
• Very short recovery time
TVJ = TVJM
100
52
700
A
A
A
IFAVM
IFRM
①
TC = 50°C; rectangular; d = 0.5
tP < 10 µs; rep. rating; pulse width limited by TVJM
IFSM
TVJ = 45°C; t = 10 ms (50 Hz), sine
450
A
• Soft recovery behaviour
TVJ
TVJM
Tstg
-40...+150
150
-40...+150
°C
°C
°C
Applications
• Antiparallel diode for high frequency
switching devices
Ptot
TC = 25°C
180
W
• Anti saturation diode
• Snubber diode
VISOL
50/60 Hz, RMS
IISOL ≤ 1 mA
t = 1 min
t = 1 s
2500
3000
V~
V~
• Free wheeling diode in converters
and motor control circuits
• Rectifiers in switch mode power
supplies (SMPS)
• Inductive heating and melting
• Uninterruptible power supplies (UPS)
• Ultrasonic cleaners and welders
Md
Mounting torque (M4)
1.5 - 2.0
14 - 18
Nm
lb.in.
Weight
Symbol
18
g
Conditions
Characteristic Values (per diode)
typ.
max.
Advantages
IR
TVJ = 25°C VR = VRRM
TVJ = 25°C VR = 0.8 • VRRM
TVJ = 125°C VR = 0.8 • VRRM
2.2
0.5
14
mA
mA
mA
• Easy to mount with two screws
• Space and weight savings
• Improved temperature and power
cycling capability
VF
IF = 60 A;
TVJ = 150°C
TVJ = 25°C
2.15
2.50
V
V
• Low noise switching
• Small and light weight
VT0
rT
For power-loss calculations only
TVJ = TVJM
1.65
8.3
V
mΩ
RthJC
RthCK
0.7
0.05
K/W
K/W
trr
IF = 1 A; -di/dt = 200 A/µs
VR = 30 V; TVJ = 25°C
40
60
36
ns
IRM
VR = 540 V; IF = 60 A; -diF/dt = 480 A/µs
32
A
L ≤ 0.05 µH; TVJ = 100°C
dS
dA
a
Creeping distance on surface
Creeping distance in air
Allowable acceleration
min. 11.2
min. 11.2
max. 50
mm
mm
m/s²
① IFAVM rating includes reverse blocking losses at TVJM, VR = 0.8 VRRM, duty cycle d = 0.5
Data according to IEC 60747
IXYS reserves the right to change limits, test conditions and dimensions
© 2001 IXYS All rights reserved
1 - 2
DSEI 2x 61-12P
90
12
µC
10
80
A
TVJ=100°C
VR= 540V
T
=100°C
VVRJ=540V
A
TVJ= 25°C
max.
T
VJ=100°C
70
60
50
40
30
20
10
0
60
40
20
0
TVJ=150°C
IF=60A
IF=120A
IF=60A
IF=30A
IF=60A
IF=120A
IF=60A
IF=30A
8
6
4
2
0
IRM
IF
Qr
typ.
max.
typ.
V
0
1
2
3
4
10
100
A/µs 1000
0
200 400 600 800 1000
A/µs
VF
-diF/dt
-diF/dt
D5
Fig. 1 Forward current
versus voltage drop.
Fig. 2 Recovery charge versus -diF/dt.
Fig. 3 Peak reverse current versus
-diF/dt.
1.4
1.2
1.0
60
V
50
1.0
1200
ns
1000
TVJ=100°C
µs
VR=540V
0.8
VFR
max.
IF=60A
40
800
IRM
trr
Kf
IF=120A
IF=60A
IF=30A
VFR
0.6
0.4
0.2
0.0
tfr
0.8
0.6
600
400
200
30
QR
20
10
0
0.4
tfr
0.2
0.0
typ.
TVJ=125°C
IF=60A
0
0
40
80
120 °C 160
0
200
400
diF/dt
600 A80/µ0s 1000
0
200
400
-diF/dt
600
800 1000
A/µs
TJ
Fig. 4 Dynamic parameters versus
junction temperature.
Fig. 5 Recovery time versus -diF/dt.
Fig. 6 Peak forward voltage
versus diF/dt.
Dimensions
Fig. 7 Transient thermal impedance junction to case.
© 2001 IXYS All rights reserved
2 - 2
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IXYS
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