BUX48 [ISC]
isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
| 型号： | BUX48 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistor |
| 文件： | 总3页 (文件大小：109K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUX48
DESCRIPTION
·High Voltage Capability
·High Current Capability
·Fast Switching Speed
APPLICATIONS
Designed for high-voltage,high-speed, power switching in
inductive circuits where fall time is critical. They are partic-
ulary suited for line-operated swtchmode applications such
as:
·Switching regulators
·Inverters
·Solenoid and relay drivers
·Motor controls
·Deflection circuits
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCEX
VCEO
VEBO
IC
PARAMETER
VALUE
850
400
7
UNIT
V
Collector-Emitter Voltage
(VBE= -1.5V)
Collector-Emitter Voltage
Emitter-Base Voltage
V
V
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-peak
15
A
ICM
30
A
IB
4
A
IBM
20
A
Collector Power Dissipation
@TC=25℃
PC
175
200
-65~200
W
℃
℃
Tj
Junction Temperature
Tstg
Storage Temperature Range
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance,Junction to Case
1.0
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUX48
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)EBO
VCE(sat)-1
VCE(sat)-2
VBE(sat)
ICER
PARAMETER
Collector-Emitter Sustaining Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
CONDITIONS
IC= 0.2A ; IB= 0; L= 25mH
IE= 50mA; IC= 0
MIN
400
7
MAX
UNIT
V
V
IC= 10A; IB= 2A
IC= 10A; IB= 2A;TC= 100℃
1.5
2.0
V
IC= 15A ;IB= 3A
5.0
V
IC= 10A; IB= 2A
IC= 10A; IB= 2A;TC= 100℃
1.6
1.6
V
VCE=rated VCER; RBE= 10Ω
VCE=rated VCER; RBE= 10Ω;TC=125℃
0.5
4
mA
mA
mA
VCE=rated VCES; VBE( )= 1.5V
off
0.2
2
ICEX
Collector Cutoff Current
V
CE=rated VCES; VBE( )= 1.5V;TC=125℃
off
IEBO
Emitter Cutoff Current
VEB= 5V; IC= 0
0.1
hFE
DC Current Gain
IC= 10A ; VCE= 5V
8
COB
Output Capacitance
350
pF
IE= 0 ; VCB= 10V,ftest= 1MHz
Switching times Resistive Load
Turn-on Time
Storage Time
Fall Time
0.9
2.0
0.4
μs
μs
μs
ton
IC= 10A ;IB1=-IB2= 2A; VCC= 300V
ts
VBE( )= 5V,Duty Cycle≤2%
off
tf
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUX48
isc Website：www.iscsemi.cn
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