BUT22BF [ISC]

isc Silicon NPN Power Transistors; ISC的硅NPN功率晶体管
BUT22BF
型号: BUT22BF
厂家: INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述:

isc Silicon NPN Power Transistors
ISC的硅NPN功率晶体管

晶体 晶体管
文件: 总2页 (文件大小:108K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistors  
BUT22BF/CF  
DESCRIPTION  
·Collector-Emitter Sustaining Voltage-  
: VCEO(SUS) = 400V(Min)- BUT22BF  
450V(Min)- BUT22CF  
·High Switching Speed  
APPLICATIONS  
·Designed for use in converters, inverters, switching  
regulators, motor control systems etc.  
ABSOLUTE MAXIMUM RATINGS(Ta=25)  
SYMBOL  
PARAMETER  
VALUE  
750  
850  
400  
450  
9
UNIT  
BUT22BF  
BUT22CF  
BUT22BF  
BUT22CF  
Collector-Emitter Voltage  
VCES  
V
VBE= 0  
VCEO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
VEBO  
IC  
ICM  
IB  
V
A
Collector Current-Continuous  
Collector Current-Peak tp< 20ms  
Base Current-Continuous  
8
20  
A
4
A
IBM  
PC  
TJ  
6
A
Base Current-Peak tp< 20ms  
Collector Power Dissipation  
@ TC=25℃  
23  
W
Junction Temperature  
150  
-65~150  
Storage Temperature Range  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
5.5  
UNIT  
/W  
/W  
Thermal Resistance, Junction to Case  
Thermal Resistance, Junction to Ambient  
Rth j-c  
Rth j-a  
55  
isc Websitewww.iscsemi.cn  
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon NPN Power Transistors  
BUT22BF/CF  
ELECTRICAL CHARACTERISTICS  
TC=25unless otherwise specified  
SYMBOL  
PARAMETER  
CONDITIONS  
MIN  
400  
450  
TYP.  
MAX  
UNIT  
BUT22BF  
BUT22CF  
Collector-Emitter  
Sustaining Voltage  
VCEO(SUS)  
IC= 0.1A ;IB= 0; L= 25mH  
V
BUT22BF IC= 6A; IB= 0.8A  
BUT22CF IC= 6A; IB= 1.0A  
BUT22BF IC= 6A; IB= 0.8A  
BUT22CF IC= 6A; IB= 1.0A  
VCE= VCESmax;VBE= 0  
1.5  
1.5  
1.5  
1.5  
1.0  
10  
Collector-Emitter  
Saturation Voltage  
VCE(sat)  
V
V
Base-Emitter  
Saturation Voltage  
VBE(sat)  
ICES  
IEBO  
hFE  
Collector Cutoff Current  
Emitter Cutoff Current  
DC Current Gain  
mA  
mA  
VEB= 9V; IC=0  
IC= 1A ; VCE= 5V  
25  
Switching Times; Resistive Load  
Turn-On Time  
Storage Time  
Fall Time  
1.0  
4.5  
0.7  
μs  
μs  
μs  
ton  
tstg  
tf  
For BUT22BF  
IC= 6A; IB1= -IB2= 0.8A  
For BUT22CF  
IC= 6A; IB1= -IB2= 1.0A  
2
isc Websitewww.iscsemi.cn  

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