BUT30 [STMICROELECTRONICS]
NPN TRANSISTOR POWER MODULE; NPN晶体管功率模块
| 型号： | BUT30 |
| 厂家： | 
ST |
| 描述： | NPN TRANSISTOR POWER MODULE |
| 文件： | 总7页 (文件大小：108K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BUT30V
NPN TRANSISTOR POWER MODULE
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■
■
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NPN TRANSISTOR
HIGH CURRENT POWER BIPOLAR MODULE
VERY LOW Rth JUNCTION CASE
SPECIFIED ACCIDENTAL OVERLOAD
AREAS
■
■
■
ISOLATED CASE (2500V RMS)
EASY TO MOUNT
LOW INTERNAL PARASITIC INDUCTANCE
APPLICATIONS:
Pin 4 not connected
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■
■
MOTOR CONTROL
SMPS & UPS
WELDING EQUIPMENT
ISOTOP
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Collector-Emitter Voltage (VBE = -5 V)
Value
200
Unit
VCEV
V
V
VCEO(sus) Collector-Emitter Voltage (IB = 0)
125
VEBO
IC
ICM
IB
Emitter-Base Voltage (IC = 0)
Collector Current
7
V
100
A
Collector Peak Current (tp = 10 ms)
Base Current
150
A
20
A
IBM
Ptot
Tstg
Tj
Base Peak Current (tp = 10 ms)
Total Dissipation at Tc = 25 oC
Storage Temperature
30
A
250
W
oC
oC
V
-55 to 150
150
Max. Operating Junction Temperature
Insulation Withstand Voltage (AC-RMS)
VISO
2500
1/7
July 1997
BUT30V
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
Max
0.5
oC/W
oC/W
Rthc-h
Thermal Resistance Case-heatsink With Conductive
Grease Applied
0.05
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICER
Collector Cut-off
Current (RBE = 5 Ω)
VCE = VCEV
VCE = VCEV
1
5
mA
mA
Tj = 100 oC
Tj = 100 oC
ICEV
IEBO
Collector Cut-off
Current (VBE = -5V)
VCE = VCEV
VCE = VCEV
1
4
mA
mA
Emitter Cut-off Current VEB = 5 V
(IC = 0)
1
mA
VCEO(SUS) * Collector-Emitter
Sustaining Voltage
IC = 0.2 A
Vcla mp = 125 V
L = 25 mH
125
V
hFE
DC Current Gain
IC = 100 A VCE = 5 V
27
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = 50 A
IC = 50 A
IB = 2.5 A
0.45
0.55
0.7
0.9
1.2
0.9
1.5
V
V
V
V
IB = 2.5 A Tj = 100 oC
IC = 100 A IB = 10 A
IC = 100 A IB = 10 A Tj = 100 oC
0.9
VBE(sat)
Base-Emitter
Saturation Voltage
IC = 50 A
IC = 50 A
IB = 2.5 A
1.15
1.1
1.45
1.55
1.4
1.4
1.8
1.9
V
V
V
V
IB = 2.5 A Tj = 100 oC
IC = 100 A IB = 10 A
IC = 100 A IB = 10 A Tj = 100 oC
diC/dt
Rate of Rise of
On-state Collector
VCC = 300 V RC = 0
IB1 = 15 A
tp = 3 µs
270
350
2.7
2
A/µs
Tj = 100 oC
VCE(3 µs)• Collector-Emitter
VCC 300 V RC = 1 Ω
IB1 = 15 A
Tj = 100 oC
VCC
=
3.5
2.5
V
Dynamic Voltage
VCE(5 µs)• Collector-Emitter
=
300 V RC = 1 Ω
V
Dynamic Voltage
IB1 = 15 A
Tj = 100 oC
ts
tf
tc
Storage Time
Fall Time
Cross-over Time
IC = 100 A
VBB = -5 V
Vcla mp = 125 V IB1 = 10 A
VCC = 90 V
RBB = 0.47 Ω
1
0.1
0.2
2
0.2
0.35
µs
µs
µs
L = 45 µH
Tj = 100 oC
VCEW
Maximum Collector
Emitter Voltage
Without Snubber
ICWoff = 150 A IB1 = 10 A
125
V
VBB = -5 V
L = 30 µH
Tj = 125 oC
VCC = 90 V
RBB = 0.5 Ω
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
2/7
BUT30V
Safe Operating Areas
Thermal Impedance
Derating Curve
Collector-emitter Voltage Versus
base-emitter Resistance
Collector Emitter Saturation Voltage
Base-Emitter Saturation Voltage
3/7
BUT30V
Reverse Biased SOA
Foward Biased SOA
Reverse Biased AOA
Forward Biased AOA
Switching Times InductiveLoad
Switching Times Inductive Load Versus
Temperature
4/7
BUT30V
Dc Current Gain
Turn-on Switching Test Circuit
(1) Fast electronic switch
(2) Non-inductive load
Turn-on Switching Waveforms
Turn-off Switching Test Circuit
Turn-off Switching Waveforms
(1) Fast electronic switch
(3) Fast recovery rectifier
(2) Non-inductive load
5/7
BUT30V
ISOTOP MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
11.8
8.9
TYP.
MAX.
12.2
9.1
MIN.
0.466
0.350
0.076
0.029
0.496
0.990
1.240
0.157
0.161
0.586
1.185
1.488
0.157
0.307
MAX.
0.480
0.358
0.080
0.033
0.503
1.003
1.248
A
B
C
D
E
F
1.95
0.75
12.6
25.15
31.5
4
2.05
0.85
12.8
25.5
31.7
G
H
J
4.1
4.3
0.169
0.594
1.193
1.503
K
L
14.9
30.1
37.8
4
15.1
30.3
38.2
M
N
O
7.8
8.2
0.322
A
G
B
O
N
J
C
K
L
M
6/7
BUT30V
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequencesof use of such information nor for any infringementof patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under anypatent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publicationsupersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronicsproducts are notauthorized for useas critical components inlife support devices or systems without express
written approvalof SGS-THOMSON Microelectonics.
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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. . .
7/7
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