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BUT232V_03 [STMICROELECTRONICS]

NPN TRANSISTOR POWER MODULE; NPN晶体管功率模块
BUT232V_03
型号： BUT232V_03
厂家： ST    ST
描述：

NPN TRANSISTOR POWER MODULE
NPN晶体管功率模块

晶体 晶体管
文件： 总7页 (文件大小：348K)
中文：  中文翻译
下载：  下载PDF数据表文档文件
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BUT232V  
®
NPN TRANSISTOR POWER MODULE  
■
■
■
HIGH CURRENT POWER BIPOLAR MODULE  
VERY LOW Rth JUNCTION CASE  
SPECIFIED ACCIDENTAL OVERLOAD  
AREAS  
■
■
FULLY INSULATED PACKAGE (U.L.  
COMPLIANT) FOR EASY MOUNTING  
LOW INTERNAL PARASITIC INDUCTANCE  
INDUSTRIAL APPLICATIONS:  
■
■
■
MOTOR CONTROL  
SMPS & UPS  
DC/DC & DC/AC CONVERTERS  
ISOTOP  
INTERNAL SCHEMATIC DIAGRAM  
ABSOLUTE MAXIMUM RATINGS  
Symbol  
Parameter  
Collector-Emitter Voltage (VBE = -5 V)  
Value  
400  
300  
7
Unit  
VCEV  
V
V
V
A
A
A
A
W
VCEO(sus) Collector-Emitter Voltage (IB = 0)  
VEBO  
IC  
ICM  
IB  
Emitter-Base Voltage (IC = 0)  
Collector Current  
140  
210  
28  
Collector Peak Current (tp = 10 ms)  
Base Current  
IBM  
Ptot  
Visol  
Base Peak Current (tp = 10 ms)  
42  
o
Total Dissipation at Tc = 25 C  
300  
2500  
Insulation Withstand Voltage (RMS) from All  
Four Terminals to External Heatsink  
Storage Temperature  
Tstg  
Tj  
-55 to 150  
150  
oC  
oC  
Max. Operating Junction Temperature  
1/7  
February 2003  
BUT232V  
THERMAL DATA  
Rthj-case Thermal Resistance Junction-case  
Max  
Max  
0.41  
0.05  
oC/W  
oC/W  
Rthc-h  
Thermal Resistance Case-heatsink With Conductive  
Grease Applied  
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)  
Symbol  
Parameter  
Test Conditions  
Min.  
Typ.  
Max.  
Unit  
ICER  
Collector Cut-off  
Current (RBE = 5 Ω)  
VCE = VCEV  
VCE = VCEV  
1
5
mA  
mA  
Tc = 100 oC  
Tc = 100 oC  
ICEV  
IEBO  
Collector Cut-off  
Current (VBE = -1.5)  
VCE = VCEV  
VCE = VCEV  
1
4
mA  
mA  
Emitter Cut-off Current VEB = 5 V  
(IC = 0)  
1
mA  
VCEO(sus)* Collector-Emitter  
Sustaining Voltage  
(IB = 0)  
IC = 0.2 A  
clamp = 300  
L = 25 mH  
300  
V
V
hFE  
DC Current Gain  
IC = 70 A VCE = 5 V  
IC = 35 A IB = 1.75 A  
IC = 35 A IB = 1.75 A Tc = 100 C  
IC = 70 A IB = 7 A  
17  
VCE(sat)  
Collector-Emitter  
Saturation Voltage  
0.5  
0.7  
0.5  
0.9  
V
V
V
V
o
1.9  
1.9  
o
IC = 70 A IB = 7 A Tc = 100 C  
VBE(sat)  
diC/dt  
Base-Emitter  
Saturation Voltage  
IC = 70 A IB = 7 A  
IC = 70 A IB = 7 A  
1.1  
1
V
V
o
Tc = 100 C  
1.3  
Rate of Rise of  
On-state Collector  
120  
190  
2.5  
1.4  
A/µs  
VCC = 300 V RC = 0  
IB1 = 10 A Tc = 100 C  
tp = 3 µs  
o
VCE(3 µs) Collector-Emitter  
4
V
VCC = 200 V RC = 3.25 Ω  
o
Dynamic Voltage  
IB1 = 6.4 A  
Tc = 100 C  
V
CE(5 µs) Collector-Emitter  
2.5  
V
VCC = 200 V RC = 3.25 Ω  
o
Dynamic Voltage  
IB1 = 6.4 A  
Tc = 100 C  
ts  
tf  
tc  
Storage Time  
Fall Time  
Cross-over Time  
IC = 70 A  
VCC = 250 V  
RBB = 0.6 Ω  
IB1 = 7 A  
3
0.25  
0.6  
5
0.4  
0.9  
µs  
µs  
µs  
VBB = -5 V  
Vclamp = 300 V  
L = 0.3 mH  
o
Tc = 100 C  
VCEW  
Maximum Collector  
Emitter Voltage  
Without Snubber  
ICWoff = 105 A  
VBB = -5 V  
L = 42 µH  
IB1 = 7 A  
VCC = 50 V  
RBB = 0.6 Ω  
300  
V
o
Tc = 125 C  
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %  
2/7  
BUT232V  
Safe Operating Area  
Thermal Impedance  
Derating Curve  
Collector Emitter Voltage Versus  
Base Emitter Resistance  
Collector Emitter Saturation Voltage  
Base-Emitter Saturation Voltage  
3/7  
BUT232V  
Reverse Biased SOA  
Foward Biased SOA  
Reverse Biased AOA  
Forward Biased AOA  
Switching Times Inductive Load  
Switching Times Inductive Load Versus  
Temperature  
4/7  
BUT232V  
Dc Current Gain  
Turn-on Switching Test Circuit  
(1) Fast electronics switch  
(2) Non-inductive load  
Turn-on Switching Waveforms  
Turn-off Switching Test Circuit  
Turn-off Switching Waveforms  
(1) Fast electronic switch  
(3) Fast recovery rectifier  
(2) Non-inductive load  
5/7  
BUT232V  
ISOTOP MECHANICAL DATA  
mm  
inch  
TYP.  
DIM.  
MIN.  
11.8  
8.9  
TYP.  
MAX.  
12.2  
9.1  
MIN.  
0.465  
0.350  
0.307  
0.029  
0.076  
1.488  
1.240  
0.990  
0.938  
MAX.  
0.480  
0.358  
0.322  
0.033  
0.080  
1.503  
1.248  
1.003  
0.950  
A
A1  
B
7.8  
8.2  
C
0.75  
1.95  
37.8  
31.5  
25.15  
23.85  
0.85  
2.05  
38.2  
31.7  
25.5  
24.15  
C2  
D
D1  
E
E1  
E2  
G
24.8  
0.976  
14.9  
12.6  
3.5  
4.1  
4.6  
4
15.1  
12.8  
4.3  
4.3  
5
0.586  
0.496  
0.137  
0.161  
0.181  
0.157  
0.157  
1.185  
0.594  
0.503  
1.169  
0.169  
0.196  
0.169  
0.173  
1.193  
G1  
G2  
F
F1  
P
4.3  
4.4  
30.3  
P1  
S
4
30.1  
P093A  
6/7  
BUT232V  
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences  
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is  
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are  
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products  
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.  
The ST logo is a trademark of STMicroelectronics  
© 2003 STMicroelectronics – Printed in Italy – All Rights Reserved  
STMicroelectronics GROUP OF COMPANIES  
Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco -  
Singapore - Spain - Sweden - Switzerland - United Kingdom - United States.  
http://www.st.com  
7/7  

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