BUT21B [ISC]
isc Silicon NPN Power Transistor;
| 型号： | BUT21B |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：191K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUT21B/C
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 400V(Min)- BUT21B
450V(Min)- BUT21C
·High Switching Speed
APPLICATIONS
·Designed for use in converters, inverters, switching
regulators, motor control systems etc.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
750
850
400
450
9
UNIT
BUT21B
BUT21C
BUT21B
BUT21C
Collector-Emitter Voltage
VBE= 0
VCES
V
VCEO
Collector-Emitter Voltage
Emitter-Base Voltage
V
VEBO
IC
ICM
IB
V
A
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
5
10
A
2
A
IBM
PC
TJ
4
A
Collector Power Dissipation
@ TC=25℃
100
150
-65~150
W
℃
℃
Junction Temperature
Storage Temperature Range
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX UNIT
Thermal Resistance, Junction to Case
1.25
℃/W
Rth j-c
1
isc website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUT21B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
400
450
TYP.
MAX
UNIT
BUT21B
BUT21C
BUT21B
BUT21C
BUT21B
BUT21C
Collector-Emitter
Sustaining Voltage
VCEO(SUS)
IC= 0.1A ;IB= 0; L= 25mH
V
IC= 3A; IB= 0.4A
IC= 3A; IB= 0.5A
IC= 3A; IB= 0.4A
IC= 3A; IB= 0.5A
VCE= VCESmax;VBE= 0
VEB= 9V; IC=0
1.5
1.5
1.5
1.5
1.0
10
Collector-Emitter
Saturation Voltage
VCE(sat)
V
V
Base-Emitter
Saturation Voltage
VBE(sat)
ICES
IEBO
hFE
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
mA
mA
IC= 0.5A ; VCE= 10V
25
Switching Times; Resistive Load
Turn-On Time
Storage Time
Fall Time
1.0
4.5
0.7
μs
μs
μs
ton
tstg
tf
VCC= 250V, tp= 20μs, T= 2ms
For BUT21B
IC= 3A; IB1= -IB2= 0.4A
For BUT21C
IC= 3A; IB1= -IB2= 0.5A
2
isc website：www.iscsemi.cn
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