BUT211X-2 [ISC]
Transistor;
| 型号： | BUT211X-2 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：231K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUT211X
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 400V(Min.)
·High Speed Switching
APPLICATIONS
·Designed for high frequency electronic lighting ballast
applications.
ABSOLUTE MAXIMUM RATINGS (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
UNIT
V
850
400
V
9
V
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-peak
5
A
ICM
10
A
IB
2
4
A
IBM
A
Collector Power Dissipation
@TC=25℃
32
W
℃
℃
PC
Tj
Junction Temperature
150
Storage Temperature Range
-65~150
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance, Junction to Case
3.95
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BUT211X
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCE(
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
CONDITIONS
IC= 0.1A; IB= 0; L= 25mH
IC= 3A; IB= 0.4A
MIN
TYP. MAX UNIT
400
V
2.0
1.3
V
V
)
sat
IC= 3A; IB= 0.4A
VBE(
)
sat
VCE= 850V; VBE= 0
VCE= 850V; VBE= 0; Tj= 125℃
1.0
2.0
ICES
mA
mA
IEBO
hFE-1
hFE-2
Emitter Cutoff Current
VEB= 9V; IC= 0
IC= 1A; VCE= 2V
IC= 3A; VCE= 2V
10
30
DC Current Gain
13
DC Current Gain
7.5
Switching Times; Resistive Load
Storage Time
Fall Time
2.0
0.8
μs
μs
ts
tf
IC= 3A; IB1= 0.3A; IB2= -0.6A
hFE-1 Classifications
1
2
3
13-20
18-25
23-30
isc Website：www.iscsemi.cn
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