BU706D [ISC]
isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
| 型号： | BU706D |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：90K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU706D
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS) = 700V(Min)
·High Switching Speed
·Built-in Integrated Diode
APPLICATIONS
·Designed for use in horizontal deflection circuits of color TV
receivers and line operated switch-mode applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCES
VCEO
VEBO
IC
PARAMETER
Collector- Emitter Voltage VBE=0
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
UNIT
V
1500
700
V
6
V
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
Base Current-Peak
5
A
ICM
8
3
A
IB
A
IBM
5
A
Collector Power Dissipation
@ TC=25℃
PC
100
150
-65~150
W
℃
℃
TJ
Junction Temperature
Storage Temperature Range
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance, Junction to Case
1.25
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU706D
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
CONDITIONS
IC= 0.1A ;IB= 0; L=25 mH
IC= 3A; IB= 1.33A
MIN
TYP. MAX UNIT
VCEO(SUS)
700
V
5.0
1.3
V
V
VCE
(sat)
IC= 3A; IB= 1.33A
VBE
(sat)
VCE= VCESmax;VBE= 0
VCE= VCESmax;VBE= 0; TJ= 125℃
0.5
1.0
ICES
mA
mA
IEBO
Emitter Cutoff Current
VEB= 6V; IC=0
IC= 3A; VCE= 5V
IF= 3A
10
hFE
DC Current Gain
2.25
1.0
VECF
C-E Diode Forward Voltage
Second Breakdown Current
1.5
2.2
V
A
IS/B
VCE= 300V; tp= 200μs
Switching Times
Fall Time
0.7
6.5
μs
μs
tf
IC= 3A; IB( )= 1A; LB= 12μH
end
Storage Time
ts
2
isc Website：www.iscsemi.cn
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ROHM
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