BU7150NUV [ROHM]
Headphone Amplifier Designed for 0.93V Low Voltage Operation; 耳机放大器，专为0.93V低电压操作
| 型号： | BU7150NUV |
| 厂家： | 
ROHM |
| 描述： | Headphone Amplifier Designed for 0.93V Low Voltage Operation |
| 文件： | 总17页 (文件大小：520K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Compact Headphone Amplifiers
Headphone Amplifier
Designed for 0.93V Low Voltage Operation
No.11102ECT01
BU7150NUV
●Description
BU7150NUV is Audio Amplifier designed for Single-cell battery operated audio products (VDD = 0.93 ~ 3.5V, at Ta=0~85°C).
BU7150NUV can be selected in single-ended mode for stereo headphone and BTL mode for mono speaker operations. For
BU7150NUV at VDD = 1.5V, THD+N = 1%, the output power is 14mW at RL = 16Ω in single-ended mode and the output
power is 85mW at RL = 8Ω in BTL mode.
●Features
1) Wide battery operation Voltage (0.93V~3.5V, Ta=0~85°C) (1.03V~3.5V, Ta= -40~85°C)
2) BU7150NUV can be selected in single-ended mode for stereo headphone and BTL mode for mono speaker operation
3) Unity-gain stability
4) Click and pop-noise reduction circuit built-in
5) Shutdown mode(Low power mode)
6) High speed turn-on mute mode
7) Thermal shutdown protection circuit
8) Power-on reset circuit not sensed during start-up slew rate of supply voltage
9) Small package (VSON010V3030)
●Applications
Noise-canceling headphone, IC recorder, Mobile phone, PDA, Electronic toys etc..
●Absolute Maximum Ratings (Ta=25℃)
Parameter
Supply Voltage
Symbol
VDD
VIN
Ratings
4.5
Unit
V
Input Voltage
VSS-0.3~VDD+0.3
-10~10
V
Input Current
IIN
mA
mW
°C
Power Dissipation
Storage Temperature Range
PD
560 *
TSTG
-55~+150
*For operating over 25°C, de-rate the value at 5.6mW/°C.
This value is for IC mounted on 74.2 mm x 74.2mm x 1.6mm glass-epoxy PCB of single-layer.
●Operating conditions
Ratings
Parameter
Symbol
Unit
Min.
-40
Typ.
-
Max.
85
Operation Temperature Range
Supply Voltage (Note 1,2)
TOPR
VDD
°C
V
0.93
-
3.5
Note 1: If the supply voltage is 0.93V, BU7150NUV does not operate at less than 0°C.
If the supply voltage is more than 1.03V, BU7150NUV operates until -40°C.
(But, it is not the one which guarantees the standard value for electric characteristics.)
Note 2: Ripple in power supply line should not exceed 400mVP-P.(VDD=1.5 V, Ta=25°C )
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.05 - Rev.C
1/16
Technical Note
BU7150NUV
●Electrical characteristics
Ta=25°C, VDD=1.5V, f=1kHz, VSS=GND unless otherwise specified.
Limits
Parameter
Symbol
Unit
Conditions
No load, No signal
SDB Pin=VSS
Min.
-
Typ.
1
Max.
1.4
No Signal Operating Current
Shutdown Current
IDD
ISD
mA
μA
-
3
15
5
9
Mute Current
IMUTE
VOFS
-
-
μA
MUTEB Pin=VSS, SE
Output Offset Voltage
-
50
mV
mW
mW
%
| VOUT1 – VOUT2 |, No signal
RL=8Ω, BTL, THD+N=1%
70
85
14
0.2
0.1
10
85
62
66
-
-
Maximum Output Power
PO
-
-
RL=16Ω, SE, THD+N=1%
-
0.5
20kHz LPF, RL=8Ω, BTL, PO=25mW
20kHz LPF, RL=16Ω, SE,PO=5ｍW
Total Harmonic Distortion +Noise THD+N
-
0.5
%
Output Voltage Noise
Crosstalk
VNO
CT
-
-
μVrms 20kHz LPF + A-weight
-
-
-
dB
dB
dB
V
RL=16Ω, SE, 1kHz BPF
Ripple voltage=200mVP-P
RL=8Ω, BTL, CBYPASS=4.7μF
,
-
-
Power Supply Rejection Ratio
PSRR
Ripple voltage=200mVP-P
RL=16Ω, SE, CBYPASS=4.7μF
,
-
Input Logic High Level
Input Logic Low Level
VIH
VIL
0.7
-
-
MUTEB Pin, SDB Pin
-
0.3
V
MUTEB Pin, SDB Pin
“BTL” is BTL-mode when MODE Pin = VDD, “SE” is single-ended mode when MODE Pin = VSS.
Turn-on time in BTL mode is about 11 times faster than single-ended mode.
Also, BTL mode does not have MUTE mode. When MUTEB Pin = VSS, then it will be shutdown mode.
●Block diagram
10
9
8
7
6
1
2
3
4
5
IN1
SDB
VDD
OUT1
MODE
OUT2
VSS
Control Logic
MUTEB
BYPASS
IN2
Bias
Generator
TOP VIEW
Fig. 1 Block diagram
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2011.05 - Rev.C
2/16
Technical Note
BU7150NUV
●Electrical characteristics waveform (Reference data)
Ta=25°C, f=1kHz, VSS=GND unless otherwise specified. Using circuits are Fig.34 and Fig.35.
Also, RL=16Ω for single ended mode, RL=8Ω for BTL mode）
0
-10
-20
-30
-40
-50
-60
-70
0
-10
-20
-30
-40
-50
-60
-70
VDD=1.5V, SE mode
VDD=1.5V, BTL mode
10n 100n 1u
10u 100u 1m
Output Power [W]
Fig. 2 THD+N vs. Output Power
10m 100m
10n 100n 1u
10u 100u 1m
Output Power [W]
Fig. 3 THD+N vs. Output Power
10m 100m
0
-10
-20
-30
-40
-50
-60
0
-10
-20
-30
-40
-50
-60
VDD=1.2V, SE mode
VDD=1.2V, BTL mode
10n 100n 1u
10u 100u 1m
Output Power [W]
10m 100m
10n 100n 1u
10u 100u 1m
Output Power [W]
10m 100m
Fig. 4 THD+N vs. Output Power
Fig. 5 THD+N vs. Output Power
0
-10
-20
-30
-40
-50
-60
-70
-80
0
-10
-20
-30
-40
-50
-60
-70
-80
VDD=1.5V, Po=5mW,
SE mode, BW<80kHz
VDD=1.5V, Po=25mW,
BTL mode, BW<80kHz
10
100
1k
Frequency [Hz]
Fig. 6 THD+N vs. Frequency
10k
100k
10
100
1k
Frequency [Hz]
Fig. 7 THD+N vs. Frequency
10k
100k
0
-10
-20
-30
-40
-50
-60
-70
-80
0
-10
-20
-30
-40
-50
-60
-70
-80
VDD=1.2V, Po=10mW,
BTL mode, BW<80kHz
VDD=1.2V, Po=2.5mW,
SE mode, BW<80kHz
10
100
1k
Frequency [Hz]
Fig. 8 THD+N vs. Frequency
10k
100k
10
100
1k
Frequency [Hz]
Fig. 9 THD+N vs. Frequency
10k
100k
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2011.05 - Rev.C
3/16
Technical Note
BU7150NUV
0
-10
-20
-30
-40
-50
-60
-70
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
-100
VDD=1.5V, SE mode
VDD=1.5V, BTL mode
-80
-90
-100
-100
-80
-60
-40
-20
0
-100
-80
-60
-40
-20
0
Input Level [dBV]
Input Level [dBV]
Fig. 10 Output Level vs. Input Level
Fig. 11 Output Level vs. Input Level
0
-20
0
-20
VDD=1.2V, BTL mode
VDD=1.2V, SE mode
-40
-40
-60
-60
-80
-80
-100
-100
-120
-120
-120
-100
-80
Input Level [dBV]
Fig. 12 Output Level vs. Input Level
-60
-40
-20
0
-120
-100
-80
Input Level [dBV]
Fig. 13 Output Level vs. Input Level
-60
-40
-20
0
10
0
10
0
-10
-20
-30
-40
-10
-20
-30
-40
-50
VDD=1.5V, Po=5mW, SE mode
VDD=1.5V, Po=25mW, BTL mode
-50
10
100
1k
10k
100k
1M
10
100
1k
Frequency [Hz]
Fig. 15 Gain vs. Frequency
10k
100k
1M
Frequency [Hz]
Fig. 14 Gain vs. Frequency
10
0
10
0
-10
-20
-30
-40
-50
-10
-20
-30
-40
-50
VDD=1.2V, Po=2.5mW, SE mode
VDD=1.2V, Po=10mW, BTL mode
10
100
1k
Frequency [Hz]
Fig. 16 Gain vs. Frequency
10k
100k
1M
10
100
1k
Frequency [Hz]
Fig. 17 Gain vs. Frequency
10k
100k
1M
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© 2011 ROHM Co., Ltd. All rights reserved.
2011.05 - Rev.C
4/16
Technical Note
BU7150NUV
1000
900 BTL mode
140
120
100
80
SE mode
800
700
600
500
400
300
200
100
0
60
THD+N = 10%
THD+N = 1%
THD+N = 10%
40
THD+N = 1%
20
0
0
1
2
3
4
0
1
2
3
4
Supply Voltage [V]
Supply Voltage [V]
Fig. 18 Maximum output Power vs. Supply Voltage
Fig. 19 Maximum output Power vs. Supply Voltage
40
35
30
25
20
15
10
5
200
180
160
140
120
100
80
BTL mode
Zoom up
SE mode
Zoom up
THD+N = 10%
:WC(PO=70mW
×
THD+N = 10%
THD+N = 1%
60
THD+N=1%)
40
THD+N = 1%
20
0
0
0.0
0.5
1.0
Supply Voltage [V]
Fig. 21 Maximum output Power vs. Supply Voltage
1.5
2.0
0.0
0.5
1.0
1.5
2.0
Supply Voltage [V]
Fig. 20 Maximum output Power vs. Supply Voltage
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
VDD=1.5V, Input=200mVP-P
,
VDD=1.5V, Input=200mVP-P
,
BTL mode, Input Terminated into 10Ω
SE mode, Input Terminated into 10Ω
10
100
1k
Frequency [Hz]
10k
100k
10
100
1k
Frequency [Hz]
10k
100k
Fig. 22 PSRR vs. Frequency
Fig. 23 PSRR vs. Frequency
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
0
-10
-20
-30
-40
-50
-60
-70
-80
-90
VDD=1.2V, Input=200mVP-P
,
VDD=1.2V, Input=200mVP-P
,
BTL mode, Input Terminated into 10Ω
SE mode, Input Terminated into 10Ω
10
100
1k
Frequency [Hz]
10k
100k
10
100
1k
Frequency [Hz]
10k
100k
Fig. 24 PSRR vs. Frequency
Fig. 25 PSRR vs. Frequency
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2011.05 - Rev.C
5/16
Technical Note
BU7150NUV
-40
-50
-40
-50
VDD=1.5V, Input=400mVP-P
,
VDD=1.2V, Input=400mVP-P
,
SE mode, Input Terminated into 10Ω
SE mode, Input Terminated into 10Ω
-60
-60
-70
-70
-80
-80
-90
-90
-100
-110
-120
-100
-110
-120
10
100
1k
Frequency [Hz]
10k
100k
10
100
1k
Frequency [Hz]
10k
100k
Fig. 26 Crosstalk vs. Frequency
Fig. 27 Crosstalk vs. Frequency
0
-20
0
-20
VDD=1.5V, BTL mode, 20kHz LPF + A-weight
VDD=1.5V, SE mode, 20kHz LPF + A-weight
-40
-40
-60
-60
-80
-80
-100
-120
-140
-160
-100
-120
-140
-160
10
100
1k
10k
100k
10
100
1k
10k
100k
Frequency [Hz]
Frequency [Hz]
Fig. 28 Noise Level vs. Frequency
Fig. 29 Noise Level vs. Frequency
1.2
1
4.5
4
SE mode, Input=no signal
SE mode, Input=no signal
3.5
3
0.8
0.6
0.4
0.2
0
2.5
2
1.5
1
0.5
0
0
1
2
3
4
0
1
2
3
4
Supply Voltage [V]
Supply Voltage [V]
Fig. 30 IDD vs. Supply Voltage
Fig. 31 ISD vs. Supply Voltage
-50
-55
-60
-65
-70
-75
-80
-85
-90
VDD=1.5V, Input=400mVP-P, SE mode
10
100
1k
10k
100k
Frequemcy [Hz]
Fig. 32 MUTE Level vs. Frequency
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2011.05 - Rev.C
6/16
Technical Note
BU7150NUV
●Application Circuit
・Resistors RF1, RF2 should be used in 20kΩ1MΩ range.
・For gain setting greater than 4 times, then RC1, RC2, CC1, CC2 can be eliminated.
Fig. 34 Single-ended mode application circuit
・Resistors RF1, RF2 should be used in 20kΩ～1MΩ range
Fig. 35 BTL mode application circuit
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2011.05 - Rev.C
7/16
Technical Note
BU7150NUV
●Pin Configuration
No.
1
Pin Name
IN1
Function
I/O equal circuit
Input Pin 1
A
C
C
D
A
-
2
SDB
Shutdown Pin (OFF at L)
Mute Pin (Mute at L)
Bypass Pin
3
MUTEB
BYPASS
IN2
4
5
Input Pin 2
6
VSS
GND Pin
7
OUT2
MODE
OUT1
VDD
Output Pin 2
B
A
B
-
8
Mode Select Pin (SE at VSS, BTL at VDD)
Output Pin 1
9
10
Power Supply Pin
●I/O equal circuit (Fig. 36)
VDD
VDD
VDD
VDD
IN1
OUT1
OUT2
IN2
MODE
50Ω
A
B
VDD
SDB
MUTEB
2kΩ
C
VDD
VDD
VDD
100kΩ
BYPASS
600kΩ
100kΩ
D
Fig.36 I/O equal circuit
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2011.05 - Rev.C
8/16
Technical Note
BU7150NUV
●Functional descriptions
[Timing Chart]
BU7150NUV can control many mode states. “Active” is normal operation state for output signal. “Shutdown” is IC power
down state for low power. “Mute” is Headphone amplifier power down state for low power and fast turn-on, because
keeping BIAS voltage = VDD/2. “Turn on” and “Turn off” are sweep state.
Fig. 37 Timing Chart (MODE = VSS: Single-ended mode)
Fig. 38 Timing Chart (MODE = VDD: BTL- mode)
Also, BU7150NUV has wait time for reduction of pop-sound at turn-on and turn-off. Turn-on wait time is 70msec from IN1
voltage = VDD/2. Turn-off wait time is 140msec from BYPASS voltage = 100mV. Please don't change SDB, MUTEB
condition at 70msec and 140msec wait- time.
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2011.05 - Rev.C
9/16
Technical Note
BU7150NUV
[About Time until Signal Output]
BU7150NUV need wait-time for BIAS charge sweep time and pop-noise reduction.
In the Fig. 37, Ts1 is BIAS charge sweep time from power on or SDB=H. Ts2 is time until signal output from power on or
SDB=H. Also, in the Fig. 38, Tb1 is BIAS charge sweep time from power on. Tb2 is time until signal output from power on.
Tb3 is BIAS charge sweep time from SDB=H. Tb4 is time until signal output from SDB=H.
These values are decided equation (1) ~ (6). However, BIAS charge sweep time (Ts1, Tb1, Tb3) have uneven ±50%, and
wait-time (70msec) is 40msec ~ 126msec for process parameter distribution. (Ta=25°C)
VDD CBYPASS
Ts1
ꢀ[sec]ꢀ・・・(ꢀ1)
6
2.510
Ts2 Ts1 0.07[sec]ꢀ・・・(ꢀ2)
VDD 2
C
BYPASS [sec]ꢀ・・・(ꢀ3)
Tb1
6
27.510
Tb2 Tb1 0.07[sec]ꢀ・・・(ꢀ4)
VDDC
27.510
Tb3
BYPASS [sec]ꢀ・・・(ꢀ5)
6
Tb4 Tb3 0.07[sec]ꢀ・・・(ꢀ6)
In the Fig. 38, Tb1 and Tb3 is differ value, because BU7150NUV’s default is single-ended mode. BU7150NUV need
BYPASS>100mV to recognize for BTL mode.
Also, Td is delay time to CI1=VDD/2 from BYPASS=VDD/2. Td is decided by CI1, RI1, and RF1.
Fig. 39 Flow of Time until Signal Output
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2011.05 - Rev.C
10/16
Technical Note
BU7150NUV
[Operation mode]
・Selecting operation mode
BU7150NUV has two OPAMP in the IC (Fig. 1). BU7150NUV is selected for BTL-mode for mono speaker and
single-ended mode for stereo headphone operation. Mode is composed of external parts and internal control (Fig. 34, 35)
BU7150NUV operates at single-ended mode when MODE pin (pin8) = 0V turn on. BTL mode is operated when MODE
pin (pin8) = VDD turn on. BYPASS voltage = 100mV then operation mode is decided by internal comparator by detecting
MODE voltage.
The difference between Single-ended mode and BTL-mode is mentioned in the following table.
Single ended mode
MODE='VSS'
BTL mode
MODE='VDD'
Parameter
Mute function
enable
Ts1=2.82sec
Ts2=2.89sec
14mW
disenable
Bypass voltage turn on time [Ts1, Tb1, Tb3]
(CBYPASS=4.7μF)
Tb1=598msec
Tb3=256msec
Time until Signal Output [Ts2, Tb2,
Tb4](CBYPASS=4.7μF)
Tb1=668msec
Tb3=326msec
Maximum Output Power (THD=1%)
Total Harmonic Distortion + Noise
85mW
0.20%
62dB
0.10%
Power Supply Rejection Ratio
66dB
(Ta=25℃, VDD=1.5V, f=1kHz)
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2011.05 - Rev.C
11/16
Technical Note
BU7150NUV
・Single-Ended mode
Single-ended mode can be use for stereo headphone amplifier using two internal amplifiers. BU7150NUV can select
amplifier gain Av using external parts. (Fig. 34) Two amplifiers gain Av is decided by input resistance RI1, RI2 and feedback
resistance RF1, RF2 aspect. Also, Please, use RF1, RF2 value in the range 20kΩ~1MΩ.
RF
AV
RI
Amplifier outputs (OUT1, OUT2) need coupling capacitors in single-ended mode operation. Coupling capacitors reduce
DC-voltage at the output and to pass the audio signal.
Single-ended mode has mute mode. Mute mode reduces pop noise and low power (typ. 15μA when MUTEB pin = Low.
Rise time is high-speed though current consumption increases more than the state of the shutdown so that the state of
the mute may keep the output level at the bias level. Mute level is decided by input resistance RI1, RI2 and feedback
resistance RF1, RF2 and RL
RL
20Log
Mute level [dB]
RI RF
BU7150NUV needs phase-compensation circuit using external parts. (Fig. 34) But, for amplifier gain Av > 4 then phase
compensation circuit may be eliminated.
・BTL mode
BTL mode can be used for mono speaker amplifier using two internal amplifiers. BU7150NUV can select amplifier gain Av
using external parts. (Fig. 35) 1st stage gain is decided by selecting external parts. But 2nd stage gain = 1. 1st stage
output signal and 2nd stage output signal are of same amplitude but phase difference of 180°.
Amplifiers gain Av is decided by input resistance RI1 and feedback resistance RF1 aspect. Also, Please, use RF1, RF2 value
in range of 20kΩ~1MΩ.
RF1
AV 2
RI1
BU7150NUV has no output pop noise at BTL mode operation, because output coupling capacitor is not charged.
Therefore, BTL mode is faster by 11 times compared to single-ended mode. SDB pin and MUTEB pin are same function
in BTL mode operation.
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2011.05 - Rev.C
12/16
Technical Note
BU7150NUV
[About Maximum Output Power]
Maximum output power of audio amplifier is reduced line impedance. Please, design to provide low impedance for the
wiring between the power source and VDD pin of BU7150NUV. Also, please design to provide low impedance for the
wiring between the GND and VSS pin of BU7150NUV.
VDD
Power source
Impedance
Speaker
Impedance
GND
Impedance
Fig. 40 Line Impedance
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2011.05 - Rev.C
13/16
Technical Note
BU7150NUV
[How to select external parts for application]
・Power supply capacitor
Power supply capacitor is important for low noise and rejection of alternating current. Please use 10μF electrolytic or
tantalum capacitor for low frequency and 0.1μF ceramic capacitor for high frequency nearer to BU7150NUV.
・BYPASS pin capacitor
BU7150NUV sweeps “Active” state after 70msec wait time after IN1 voltage = VDD/2. IN1 voltage are subordinated
BYPASS voltage Ts. BYPASS voltage is subordinated BYPASS pin capacitor CBYPASS. Therefore, High speed turn on time
is possible if CBYPASS is small value. But, pop noise may occur during turn on time. Therefore, CBYPASS need to be selected
best value for application.
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2011.05 - Rev.C
14/16
Technical Note
BU7150NUV
●Notes for use
(1) Absolute Maximum Ratings
An excess in the absolute maximum ratings, such as supply voltage, temperature range of operating conditions, etc.,
can break down devices, thus making impossible to identify breaking mode such as a short circuit or an open circuit. If
any special mode exceeding the absolute maximum ratings is assumed, consideration should be given to take physical
safety measures including the use of fuses, etc.
(2) Operating conditions
These conditions represent a range within which characteristics can be provided approximately as expected. The
electrical characteristics are guaranteed under the conditions of each parameter.
(3) Reverse connection of power supply connector
The reverse connection of power supply connector can break down ICs. Take protective measures against the
breakdown due to the reverse connection, such as mounting an external diode between the power supply and the IC’s
power supply terminal.
(4) Power supply line
Design PCB pattern to provide low impedance for the wiring between the power supply and the GND lines. In this
regard, for the digital block power supply and the analog block power supply, even though these power supplies has
the same level of potential, separate the power supply pattern for the digital block from that for the analog block, thus
suppressing the diffraction of digital noises to the analog block power supply resulting from impedance common to the
wiring patterns. For the GND line, give consideration to design the patterns in a similar manner.
Furthermore, for all power supply terminals to ICs, mount a capacitor between the power supply and the GND terminal.
At the same time, in order to use an electrolytic capacitor, thoroughly check to be sure the characteristics of the
capacitor to be used present no problem including the occurrence of capacity dropout at a low temperature, thus
determining the constant.
(5) GND voltage
Make setting of the potential of the GND terminal so that it will be maintained at the minimum in any operating state.
Furthermore, check to be sure no terminals are at a potential lower than the GND voltage including an actual electric
transient.
(6) Short circuit between terminals and erroneous mounting
In order to mount ICs on a set PCB, pay thorough attention to the direction and offset of the ICs. Erroneous mounting
can break down the ICs. Furthermore, if a short circuit occurs due to foreign matters entering between terminals or
between the terminal and the power supply or the GND terminal, the ICs can break down.
(7) Operation in strong electromagnetic field
Be noted that using ICs in the strong electromagnetic field can malfunction them.
(8) Inspection with set PCB
On the inspection with the set PCB, if a capacitor is connected to a low-impedance IC terminal, the IC can suffer stress.
Therefore, be sure to discharge from the set PCB by each process. Furthermore, in order to mount or dismount the set
PCB to/from the jig for the inspection process, be sure to turn OFF the power supply and then mount the set PCB to
the jig. After the completion of the inspection, be sure to turn OFF the power supply and then dismount it from the jig. In
addition, for protection against static electricity, establish a ground for the assembly process and pay thorough attention
to the transportation and the storage of the set PCB.
(9) Input terminals
In terms of the construction of IC, parasitic elements are inevitably formed in relation to potential. The operation of the
parasitic element can cause interference with circuit operation, thus resulting in a malfunction and then breakdown of
the input terminal. Therefore, pay thorough attention not to handle the input terminals, such as to apply to the input
terminals a voltage lower than the GND respectively, so that any parasitic element will operate. Furthermore, do not
apply a voltage to the input terminals when no power supply voltage is applied to the IC. In addition, even if the power
supply voltage is applied, apply to the input terminals a voltage lower than the power supply voltage or within the
guaranteed value of electrical characteristics.
(10) Ground wiring pattern
If small-signal GND and large-current GND are provided, It will be recommended to separate the large-current GND
pattern from the small-signal GND pattern and establish a single ground at the reference point of the set PCB so that
resistance to the wiring pattern and voltage fluctuations due to a large current will cause no fluctuations in voltages of
the small-signal GND. Pay attention not to cause fluctuations in the GND wiring pattern of external parts as well.
(11) External capacitor
In order to use a ceramic capacitor as the external capacitor, determine the constant with consideration given to a
degradation in the nominal capacitance due to DC bias and changes in the capacitance due to temperature, etc.
(12) About the rush current
For ICs with more than one power supply, it is possible that rush current may flow instantaneously due to the internal
powering sequence and delays. Therefore, give special consideration to power coupling capacitance, power wiring,
width of GND wiring, and routing of wiring.
(13) Others
In case of use this LSI, please peruse some other detail documents, we called ,Technical note, Functional description,
Application note.
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2011.05 - Rev.C
15/16
Technical Note
BU7150NUV
●Ordering part number
B
D
7
1
5
0
N
U
V
-
E
2
Part No.
Part No.
Package
NUV : VSON010V3030
Packaging and forming specification
E2: Embossed tape and reel
VSON010V3030
<Tape and Reel information>
3.0 0.1
Tape
Embossed carrier tape
3000pcs
Quantity
1PIN MARK
E2
S
Direction
of feed
The direction is the 1pin of product is at the upper left when you hold
reel on the left hand and you pull out the tape on the right hand
(
)
0.08
S
2.0 0.1
0.5
C0.25
1
5
10
6
+0.05
0.5
Direction of feed
1pin
0.25
-
0.04
Reel
(Unit : mm)
Order quantity needs to be multiple of the minimum quantity.
∗
www.rohm.com
© 2011 ROHM Co., Ltd. All rights reserved.
2011.05 - Rev.C
16/16
Notice
N o t e s
No copying or reproduction of this document, in part or in whole, is permitted without the
consent of ROHM Co.,Ltd.
The content specified herein is subject to change for improvement without notice.
The content specified herein is for the purpose of introducing ROHM's products (hereinafter
"Products"). If you wish to use any such Product, please be sure to refer to the specifications,
which can be obtained from ROHM upon request.
Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
be taken into account when designing circuits for mass production.
Great care was taken in ensuring the accuracy of the information specified in this document.
However, should you incur any damage arising from any inaccuracy or misprint of such
information, ROHM shall bear no responsibility for such damage.
The technical information specified herein is intended only to show the typical functions of and
examples of application circuits for the Products. ROHM does not grant you, explicitly or
implicitly, any license to use or exercise intellectual property or other rights held by ROHM and
other parties. ROHM shall bear no responsibility whatsoever for any dispute arising from the
use of such technical information.
The Products specified in this document are intended to be used with general-use electronic
equipment or devices (such as audio visual equipment, office-automation equipment, commu-
nication devices, electronic appliances and amusement devices).
The Products specified in this document are not designed to be radiation tolerant.
While ROHM always makes efforts to enhance the quality and reliability of its Products, a
Product may fail or malfunction for a variety of reasons.
Please be sure to implement in your equipment using the Products safety measures to guard
against the possibility of physical injury, fire or any other damage caused in the event of the
failure of any Product, such as derating, redundancy, fire control and fail-safe designs. ROHM
shall bear no responsibility whatsoever for your use of any Product outside of the prescribed
scope or not in accordance with the instruction manual.
The Products are not designed or manufactured to be used with any equipment, device or
system which requires an extremely high level of reliability the failure or malfunction of which
may result in a direct threat to human life or create a risk of human injury (such as a medical
instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-
controller or other safety device). ROHM shall bear no responsibility in any way for use of any
of the Products for the above special purposes. If a Product is intended to be used for any
such special purpose, please contact a ROHM sales representative before purchasing.
If you intend to export or ship overseas any Product or technology specified herein that may
be controlled under the Foreign Exchange and the Foreign Trade Law, you will be required to
obtain a license or permit under the Law.
Thank you for your accessing to ROHM product informations.
More detail product informations and catalogs are available, please contact us.
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http://www.rohm.com/contact/
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© 2011 ROHM Co., Ltd. All rights reserved.
R1120
A
相关型号：
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