BU2527AX [ISC]
isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
| 型号： | BU2527AX |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：106K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU2527AX
DESCRIPTION
·Collector-Emitter Sustaining Voltage-
: VCEO(SUS)= 800V (Min)
·High Switching Speed
APPLICATIONS
·Designed for use in horizontal deflection circuits of high
resolution monitors.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCES
VCEO
VEBO
IC
PARAMETER
Collector- Emitter Voltage(VBE= 0)
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
1500
800
7.5
UNIT
V
V
V
Collector Current- Continuous
Collector Current-Peak
12
A
ICM
30
A
IB
Base Current- Continuous
Base Current-Peak
8
A
IBM
12
A
Collector Power Dissipation
@ TC=25℃
PC
45
W
℃
℃
TJ
Junction Temperature
150
-55~150
Storage Temperature Range
Tstg
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance,Junction to Case
2.8
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BU2527AX
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)EBO
PARAMETER
Collector-Emitter Sustaining Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
CONDITIONS
IC= 100mA ; IB= 0,L= 25mH
IE= 1mA; IC= 0
MIN
800
7.5
TYP. MAX UNIT
V
V
IC= 6A; IB= 1.2A
5.0
1.3
V
V
VCE
(sat)
IC= 6A; IB= 1.2A
VBE
(sat)
VCE= 1500V; VBE= 0
VCE= 1500V; VBE= 0; TC=125℃
0.25
2.0
ICES
mA
mA
IEBO
Emitter Cutoff Current
VEB= 7.5V; IC= 0
0.25
21
9
hFE-1
DC Current Gain
IC= 1A; VCE= 5V
6
5
hFE-2
DC Current Gain
IC= 6A; VCE= 5V
COB
Output Capacitance
145
pF
IE= 0; VCB= 10V; ftest= 1MHz
Switching times
Storage Time
2.0
0.2
μs
μs
tstg
IC= 6A , IB( )= 0.55A; LB= 0.6μH
-VBB= 2V; (-dIB/dt= 3.33A/μs)
end
Fall Time
tf
2
isc Website：www.iscsemi.cn
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