BU2527DF [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管型号: | BU2527DF |
厂家: | Savantic, Inc. |
描述: | Silicon NPN Power Transistors |
文件: | 总3页 (文件大小:119K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU2527DF
DESCRIPTION
·With TO-3PFa package
·High voltage
·High speed switching
·Built-in damper diode
APPLICATIONS
·For use in horizontal deflection circuits
of high resolution monitors
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
3
Absolute maximum ratings(Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
CONDITIONS
Open emitter
VALUE
1500
800
7.5
UNIT
V
Open base
V
Open collector
V
Collector current (DC)
Collector current -peak
Base current (DC)
12
A
ICM
30
A
IB
8
A
IBM
Base current -peak
12
A
Ptot
Total power dissipation
Max.operating junction temperature
Storage temperature
TC=25ꢀ
45
W
ꢀ
Tj
150
-65~150
Tstg
ꢀ
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU2527DF
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)EBO
VCEsat
VBEsat
ICES
PARAMETER
CONDITIONS
MIN
800
7.5
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage IC=100mA ;IB=0,L=25mH
Emitter-base breakdown voltage
IE=600mA ;IC=0
13.5
V
Collector-emitter saturation voltage IC=8A ;IB=1.6A
5.0
1.1
V
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=8A ;IB=1.6A
V
VCE=BVCES; VBE=0
Tj=125ꢀ
1.0
2.0
mA
mA
IEBO
VEB=6V; IC=0
110
11
hFE-1
IC=1A ; VCE=5V
IC=8A ; VCE=5V
IE=0 ; VCB=10V; f=1MHz
IF=8A
hFE-2
DC current gain
5
10
CC
Collector capacitance
Diode forward voltage
145
pF
V
VF
2.0
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
BU2527DF
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
相关型号:
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