BU2527DF [JMNIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | BU2527DF |
| 厂家： | 
QUANZHOU JINMEI ELECTRONIC CO.,LTD. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：51K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
BU2527DF
DESCRIPTION
·
·With TO-3PFa package
·High voltage
·High speed switching
·Built-in damper diode
APPLICATIONS
·For use in horizontal deflection
circuits of high resolution monitors
PINNING
PIN
DESCRIPTION
1
Base
2
3
Collector
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
CONDITIONS
Open emitter
VALUE
1500
800
6
UNIT
V
Open base
V
Open collector
V
Collector current (DC)
Collector current (Pulse)
Base current (DC)
12
A
ICP
30
A
IB
8
A
IBM
Base current (Pulse)
12
A
Ptot
Total power dissipation
Max.operating junction temperature
Storage temperature
TC=25℃
45
W
℃
℃
Tj
150
-65~150
Tstg
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
BU2527DF
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VEBO
VCEsat
VBEsat
ICES
PARAMETER
Collector-emitter sustaining voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Emitter-base saturation voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
IC=100mA ;IB=0,L=25mH
IE=600mA ;IC=0
MIN
800
7.5
TYP.
MAX
UNIT
V
13.5
V
IC=8A ;IB=1.6A
5.0
1.1
V
IC=8A ;IB=1.6A
V
VCE=BVCES; VBE=0
1.0
2.0
mA
mA
TC=125℃
IEBO
VEB=6V; IC=0
110
11
hFE-1
DC current gain
IC=1A ; VCE=5V
IC=8A ; VCE=5V
IE=0 ; VCB=10V；f=1MHz
IF=8A
hFE-2
DC current gain
5
10
CC
Collector capacitance
145
pF
V
VF
Diode forward voltage
2.0
JMnic
Product Specification
www.jmnic.com
Silicon NPN Power Transistors
BU2527DF
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
JMnic
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