BFG520 [ISC]
isc Silicon NPN RF Transistor;
| 型号： | BFG520 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN RF Transistor |
| 文件： | 总3页 (文件大小：281K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
BFG520/X
DESCRIPTION
·Low Noise Figure
NF = 1.3 dB TYP. @VCE = 8 V, IC = 10 mA, f = 900 MHz
·High Gain
︱S21︱2 =16dB TYP. @VCE= 8 V,IC = 40 mA,f = 900 MHz
·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS
·Designed for use in low noise ,high-gain amplifiers and
linear broadband amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
VCEO
VEBO
IC
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
20
15
2.5
70
V
V
V
Collector Current-Continuous
mA
Collector Power Dissipation
@TC=25℃
PC
TJ
0.3
150
W
℃
℃
Junction Temperature
Storage Temperature Range
-65~150
Tstg
1
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
BFG520/X
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
ICBO
PARAMETER
Collector-Emitter Breakdown Voltage
Collector Cutoff Current
DC Current Gain
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC= 1mA ; IB= 0
15
VCB= 8V; IE= 0
0.05
250
μA
hFE
IC=20mA ; VCE= 6V
60
fT
Current-Gain—Bandwidth Product
Feedback Capacitance
Emitter capacitance
IC= 20mA ; VCE= 6V; f= 1MHz
IE= 0 ; VCB= 6V; f= 1MHz
IC=iC=0,VEB=0.5V,f=1MHz
IE=ie=0,VCB=6V,f=1MHz
IC= 40mA ; VCE= 8V; f= 900MHz
IC= 5mA ; VCE= 6V; f= 900MHz
IC= 20mA ; VCE= 6V; f= 900MHz
IC= 5mA ; VCE= 8V; f= 2GHz
9
GHz
pF
Cre
0.3
1.0
0.6
18
Ce
pF
Collector capacitance
pF
CC
︱S21︱2
Insertion Power Gain
17
dB
1.1
1.6
1.9
1.6
2.1
NF
dB
Noise Figure
2
isc website：www.iscsemi.com
isc & iscsemi is registered trademark
INCHANGE Semiconductor
isc Silicon NPN RF Transistor
BFG520
PACKAGE SIZE DRAWING
3
相关型号：
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