BFG520/X,235 [NXP]
BFG520 - NPN 9 GHz wideband transistor SOT-143 4-Pin;
| 型号： | BFG520/X,235 |
| 厂家： | 
NXP |
| 描述： | BFG520 - NPN 9 GHz wideband transistor SOT-143 4-Pin |
| 文件： | 总14页 (文件大小：319K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BFG520; BFG520/X; BFG520/XR
NPN 9 GHz wideband transistor
Rev. 04 — 23 November 2007
Product data sheet
IMPORTANT NOTICE
Dear customer,
As from October 1st, 2006 Philips Semiconductors has a new trade name
- NXP Semiconductors, which will be used in future data sheets together with new contact
details.
In data sheets where the previous Philips references remain, please use the new links as
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(email)
The copyright notice at the bottom of each page (or elsewhere in the document,
depending on the version)
- © Koninklijke Philips Electronics N.V. (year). All rights reserved -
is replaced with:
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If you have any questions related to the data sheet, please contact our nearest sales
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NXP Semiconductors
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
FEATURES
PINNING
PIN
4
3
page
• High power gain
DESCRIPTION
• Low noise figure
BFG520 (Fig.1) Code: %MF
• High transition frequency
1
collector
base
• Gold metallization ensures
excellent reliability.
2
3
4
1
2
Top view
MSB014
emitter
emitter
DESCRIPTION
Fig.1 SOT143B.
BFG520/X (Fig.1) Code: %ML
NPN silicon planar epitaxial
1
2
3
4
collector
emitter
base
transistors, intended for applications
in the RF frontend in the GHz range,
such as analog and digital cellular
telephones, cordless telephones
(CT1, CT2, DECT, etc.), radar
detectors, pagers and satellite TV
tuners (SATV) and repeater
3
4
emitter
BFG520/XR (Fig.2) Code: %MP
1
2
3
4
collector
emitter
base
2
1
amplifiers in fibre-optic systems.
Top view
MSB035
The transistors are encapsulated in
4-pin, dual-emitter plastic SOT143
and SOT143R envelopes.
emitter
Fig.2 SOT143R.
QUICK REFERENCE DATA
SYMBOL
VCBO
VCEO
Ic
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
20
UNIT
collector-base voltage
open emitter
−
−
−
−
−
V
collector-emitter voltage open base
DC collector current
−
15
70
300
250
−
V
−
mA
mW
Ptot
hFE
Cre
fT
total power dissipation up to Ts = 88 °C; note 1
−
DC current gain
IC = 20 mA; VCE = 6 V; Tj = 25 °C
60
−
120
0.3
9
feedback capacitance
transition frequency
IC = 0; VCB = 6 V; f = 1 MHz
pF
IC = 20 mA; VCE = 6 V; f = 1 GHz;
−
−
GHz
Tamb = 25 °C
GUM
maximum unilateral
power gain
IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 °C
−
19
−
dB
dB
dB
dB
dB
dB
IC = 20 mA; VCE = 6 V; f = 2 GHz;
Tamb = 25 °C
−
13
−
2
S21
insertion power gain
noise figure
IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 °C
17
−
18
−
F
Γs = Γopt ; Ic = 5 mA; VCE = 6 V;
f = 900 MHz; Tamb = 25 °C
1.1
1.6
1.9
1.6
2.1
−
Γs = Γopt ; IC = 20 mA; VCE = 6 V;
f = 900 MHz; Tamb = 25 °C
−
Γs = Γopt ; IC = 5 mA; VCE = 8 V;
f = 2 GHz; Tamb = 25 °C
−
Rev. 04 - 23 November 2007
2 of 14
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
MIN.
MAX.
20
UNIT
−
−
−
−
−
V
V
V
VCEO
VEBO
IC
open base
15
open collector
2.5
70
mA
mW
°C
Ptot
Tstg
Tj
up to Ts = 88 °C; note 1
300
150
175
−65
−
°C
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
Rth j-s
thermal resistance from junction to up to Ts = 88 °C; note 1
290 K/W
soldering point
Note
1. Ts is the temperature at the soldering point of the collector tab.
Rev. 04 - 23 November 2007
3 of 14
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
collector cut-off current
DC current gain
CONDITIONS
IE = 0; VCB = 6 V
MIN.
TYP.
MAX.
50
UNIT
nA
ICBO
hFE
Ce
−
−
IC = 20 mA; VCE = 6 V
60
−
120
1
250
−
emitter capacitance
collector capacitance
feedback capacitance
transition frequency
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IE = ie = 0; VCB = 6 V; f = 1 MHz
IC = 0; VCB = 6 V; f = 1 MHz
pF
Cc
−
0.6
0.3
9
−
pF
Cre
fT
−
−
pF
IC = 20 mA; VCE = 6 V; f = 1 GHz;
−
−
GHz
Tamb = 25 °C
GUM
maximum unilateral
power gain (note 1)
IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 °C
−
19
−
dB
dB
dB
dB
dB
dB
dBm
IC = 20 mA; VCE = 6 V; f = 2 GHz;
Tamb = 25 °C
−
13
−
2
S21
insertion power gain
noise figure
IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 °C
17
−
18
−
F
Γs = Γopt; IC = 5 mA; VCE = 6 V;
f = 900 MHz; Tamb = 25 °C
1.1
1.6
1.9
17
1.6
2.1
−
Γs = Γopt; IC = 20 mA; VCE = 6 V;
f = 900 MHz; Tamb = 25 °C
−
Γs = Γopt; IC = 5 mA; VCE = 6 V;
f = 2 GHz; Tamb = 25 °C
−
PL1
output power at 1 dB gain
compression
IC = 20 mA; VCE = 6 V; RL = 50 Ω;
f = 900 MHz; Tamb = 25 °C
−
−
ITO
Vo
third order intercept point
output voltage
note 2
note 3
−
−
−
26
−
−
−
dBm
mV
dB
275
−50
d2
second order intermodulation IC = 20 mA; VCE = 6 V; Vo = 75 mV;
distortion Tamb = 25 °C; f(p+q) = 810 MHz
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S21
2
--------------------------------------------------------------
GUM = 10 log
dB.
2
1 – S11
1 – S22
2. IC = 20 mA; VCE = 6 V; RL = 50 Ω; f = 900 MHz; Tamb = 25 °C;
fp = 900 MHz; fq = 902 MHz;
measured at f(2p−q) = 898 MHz and f(2q−p) = 904 MHz.
3. dim = −60 dB (DIN 45004B);
Vp = Vo; Vq = Vo −6 dB; Vr = Vo −6 dB;
fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz;
measured at f(p+q−r) = 793.25 MHz
Rev. 04 - 23 November 2007
4 of 14
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
MRA670-1
MRA671
400
250
handbook, halfpage
handbook, halfpage
P
h
tot
FE
(mW)
200
150
100
300
200
100
0
50
0
−2
−1
2
10
10
1
10
10
0
50
100
150
200
I
(mA)
o
( C)
C
T
s
VCE = 6 V; Tj = 25 °C.
Fig.4 DC current gain as a function of collector
current.
Fig.3 Power derating curve.
MRA672
MRA673
0.6
12
handbook, halfpage
handbook, halfpage
C
f
re
T
V
V
= 6 V
= 3 V
CE
CE
(pF)
(GHz)
0.4
8
0.2
4
0
0
0
−1
2
10
1
10
10
4
8
12
I
(mA)
V
(V)
C
CB
IC = 0; f = 1 MHz.
f = 1 GHz; Tamb = 25 °C.
Fig.6 Transition frequency as a function of
collector current.
Fig.5 Feedback capacitance as a function of
collector-base voltage.
Rev. 04 - 23 November 2007
5 of 14
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
In Figs 7 to 10, GUM = maximum unilateral power gain;
MSG = maximum stable gain; Gmax = maximum available
gain.
MRA675
25
MRA674
handbook, halfpage
25
handbook, halfpage
gain
(dB)
gain
(dB)
G
max
20
15
10
5
MSG
20
G
UM
G
max
15
10
5
MSG
G
UM
0
0
0
10
20
30
I
(mA)
0
10
20
30
C
I
(mA)
C
VCE = 6 V; f = 900 MHz; Tamb = 25 °C.
VCE = 6 V; f = 2 GHz; Tamb = 25 °C.
Fig.7 Gain as a function of collector current.
Fig.8 Gain as a function of collector current.
MRA676
MRA677
50
50
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
G
UM
40
40
30
G
UM
MSG
30
MSG
20
10
0
20
10
0
G
G
max
max
2
4
2
4
3
3
10
10
10
10
10
10
10
10
f (MHz)
f (MHz)
IC = 20 mA; VCE = 6 V; Tamb = 25 °C.
IC = 5 mA; VCE = 6 V; Tamb = 25 °C.
Fig.9 Gain as a function of frequency.
Fig.10 Gain as a function of frequency.
Rev. 04 - 23 November 2007
6 of 14
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
MEA975
MEA974
−20
−20
handbook, halfpage
handbook, halfpage
d
d
2
im
(dB)
(dB)
−30
−30
−40
−50
−40
−50
−60
−70
−60
−70
0
10
20
30
40
50
(mA)
0
10
20
30
40
50
(mA)
I
I
C
C
Fig.11 Intermodulation distortion as a function of
collector current.
Fig.12 Second order intermodulation distortion as
a function of collector current.
MRA682
MRA683
5
20
G
5
20
G
handbook, halfpage
handbook, halfpage
I
= 5 mA
20 mA
f = 900 MHz
1000 MHz
F
F
C
ass
ass
min
(dB)
min
(dB)
(dB)
(dB)
G
ass
15
15
4
4
G
ass
2000 MHz
10
5
10
5
3
3
2
2000 MHz
2
F
1000 MHz
min
20 mA
F
min
0
0
1
0
1
0
5 mA
900 MHz
500 MHz
−5
−5
2
4
2
3
10
10
1
10
10
10
I
(mA)
C
f (MHz)
V CE = 6 V; Tamb = 25 °C.
VCE = 6 V; Tamb = 25 °C.
Fig.13 Minimum noise figure and associated
available gain as functions of collector
current.
Fig.14 Minimum noise figure and associated
available gain as functions of frequency.
Rev. 04 - 23 November 2007
7 of 14
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
stability
90°
circle
1.0
1
0.8
135°
0.5
45°
2
pot. unst.
0.6
region
0.4
0.2
0
F
= 1. 1 dB
min
0.2
5
Γ
OPT
0.2
0.5
1
2
5
180°
0°
0
F = 1.5 dB
F = 2 dB
5
0.2
F = 3 dB
0.5
2
−45°
−135°
1
MRA684
1.0
−90°
IC = 5 mA; VCE = 6 V;
f = 900 MHz; Zo = 50 Ω.
Fig.15 Noise circle figure.
90°
1.0
0.8
0.6
0.4
0.2
0
1
135°
45°
2
0.5
F = 3 dB
F = 2.5 dB
F = 2 dB
OPT
0.2
Γ
5
G
= 13 dB
F
= 1. 9 dB
1
max
min
Γ
0.2
0.5
2
5
MS
180°
0°
0
G = 12 dB
G = 11 dB
5
0.2
G = 10 dB
0.5
2
−45°
−135°
1
MRA685
1.0
−90°
IC = 5 mA; VCE = 6 V;
f = 2 GHz; Zo = 50 Ω.
Fig.16 Noise circle figure.
Rev. 04 - 23 November 2007
8 of 14
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
90°
1.0
1
0.8
135°
45°
2
0.5
0.6
3 GHz
0.4
0.2
5
0.2
0.2
0.5
1
2
5
180°
0°
0
0
40 MHz
5
0.2
0.5
2
−45°
−135°
1
MRA678
1.0
−90°
IC = 20 mA; VCE = 6 V.
Zo = 50 Ω.
Fig.17 Common emitter input reflection coefficient (S11).
90°
135°
45°
40 MHz
40
3 GHz
180°
0°
50
30
20
10
−135°
−45°
MRA679
−90°
IC = 20 mA; VCE = 6 V.
Fig.18 Common emitter forward transmission coefficient (S21).
Rev. 04 - 23 November 2007
9 of 14
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
90°
135°
45°
3 GHz
40 MHz
180°
0°
0.25 0.20 0.15 0.10 0.05
−135°
−45°
MRA680
−90°
IC = 20 mA; VCE = 6 V.
Fig.19 Common emitter reverse transmission coefficient (S12).
90°
1.0
0.8
0.6
0.4
0.2
0
1
135°
45°
2
0.5
0.2
5
0.2
0.5
1
2
5
180°
0°
0
40 MHz
5
3 GHz
0.2
0.5
2
−45°
−135°
1
MRA681
1.0
−90°
IC = 20 mA; VCE = 6 V.
Zo = 50 Ω.
Fig.20 Common emitter output reflection coefficient (S22).
Rev. 04 - 23 November 2007
10 of 14
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
PACKAGE OUTLINES
Plastic surface mounted package; 4 leads
SOT143B
D
B
E
A
X
y
H
v
M
A
E
e
b
p
w
M
B
4
3
Q
A
A
1
c
1
2
L
p
b
1
e
1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
E
1.1
0.9
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
0.1
mm
1.9
1.7
0.2
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT143B
Rev. 04 - 23 November 2007
11 of 14
NXP Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
Plastic surface mounted package; reverse pinning; 4 leads
SOT143R
D
B
E
A
X
y
H
v
M
A
E
e
b
w
M
B
p
3
4
Q
A
A
1
c
2
1
L
p
b
1
e
1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
E
1.1
0.9
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.55
0.25
0.45
0.25
0.1
mm
1.9
1.7
0.2
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-03-10
SOT143R
Rev. 04 - 23 November 2007
12 of 14
BFG520; BFG520/X; BFG520/XR
NXP Semiconductors
NPN 9 GHz wideband transistor
Legal information
Data sheet status
Document status[1][2]
Product status[3]
Development
Definition
Objective [short] data sheet
This document contains data from the objective specification for product development.
This document contains data from the preliminary specification.
This document contains the product specification.
Preliminary [short] data sheet Qualification
Product [short] data sheet Production
[1]
[2]
[3]
Please consult the most recently issued document before initiating or completing a design.
The term ‘short data sheet’ is explained in section “Definitions”.
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
malfunction of an NXP Semiconductors product can reasonably be expected
Definitions
to result in personal injury, death or severe property or environmental
damage. NXP Semiconductors accepts no liability for inclusion and/or use of
NXP Semiconductors products in such equipment or applications and
therefore such inclusion and/or use is at the customer’s own risk.
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liability for the consequences of
use of such information.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
Terms and conditions of sale — NXP Semiconductors products are sold
subject to the general terms and conditions of commercial sale, as published
at http://www.nxp.com/profile/terms, including those pertaining to warranty,
intellectual property rights infringement and limitation of liability, unless
explicitly otherwise agreed to in writing by NXP Semiconductors. In case of
any inconsistency or conflict between information in this document and such
terms and conditions, the latter will prevail.
Disclaimers
General — Information in this document is believed to be accurate and
reliable. However, NXP Semiconductors does not give any representations or
warranties, expressed or implied, as to the accuracy or completeness of such
information and shall have no liability for the consequences of use of such
information.
No offer to sell or license — Nothing in this document may be interpreted
or construed as an offer to sell products that is open for acceptance or the
grant, conveyance or implication of any license under any copyrights, patents
or other industrial or intellectual property rights.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all information supplied prior
to the publication hereof.
Trademarks
Notice: All referenced brands, product names, service names and trademarks
are the property of their respective owners.
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in medical, military, aircraft,
space or life support equipment, nor in applications where failure or
Contact information
For additional information, please visit: http://www.nxp.com
For sales office addresses, send an email to: salesaddresses@nxp.com
Rev. 04 - 23 November 2007
13 of 14
BFG520; BFG520/X; BFG520/XR
NXP Semiconductors
NPN 9 GHz wideband transistor
Revision history
Revision history
Document ID
Release date
20071123
Data sheet status
Change notice
Supersedes
BFG520XR_N_4
Modifications:
Product data sheet
-
BFG520XR_CNV_3
• Pinning table on page 2; changed code
BFG520XR_CNV_3
BFG520XR_2
19950901
Product specification
-
-
-
BFG520XR_2
-
-
Product specification
-
BFG520XR_1
-
BFG520XR_1
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
© NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 23 November 2007
Document identifier: BFG520XR_N_4
相关型号：
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