BFG520/XR [NXP]
NPN 9 GHz wideband transistor; NPN 9 GHz宽带晶体管
| 型号： | BFG520/XR |
| 厂家： | 
NXP |
| 描述： | NPN 9 GHz wideband transistor |
| 文件： | 总13页 (文件大小：150K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
DISCRETE SEMICONDUCTORS
DATA SHEET
BFG520; BFG520/X; BFG520/XR
NPN 9 GHz wideband transistor
September 1995
Product specification
File under Discrete Semiconductors, SC14
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
FEATURES
PINNING
PIN
4
3
page
• High power gain
DESCRIPTION
• Low noise figure
BFG520 (Fig.1) Code: N36
• High transition frequency
1
collector
base
• Gold metallization ensures
excellent reliability.
2
3
4
1
2
Top view
MSB014
emitter
emitter
DESCRIPTION
Fig.1 SOT143B.
BFG520/X (Fig.1) Code: N42
NPN silicon planar epitaxial
1
2
3
4
collector
emitter
base
transistors, intended for applications
in the RF frontend in the GHz range,
such as analog and digital cellular
telephones, cordless telephones
(CT1, CT2, DECT, etc.), radar
detectors, pagers and satellite TV
tuners (SATV) and repeater
3
4
emitter
BFG520/XR (Fig.2) Code: N48
1
2
3
4
collector
emitter
base
2
1
amplifiers in fibre-optic systems.
Top view
MSB035
The transistors are encapsulated in
4-pin, dual-emitter plastic SOT143
and SOT143R envelopes.
emitter
Fig.2 SOT143R.
QUICK REFERENCE DATA
SYMBOL
VCBO
VCEO
Ic
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
20
UNIT
collector-base voltage
open emitter
−
−
−
−
−
V
collector-emitter voltage open base
DC collector current
−
15
70
300
250
−
V
−
mA
mW
Ptot
hFE
Cre
fT
total power dissipation up to Ts = 88 °C; note 1
−
DC current gain
IC = 20 mA; VCE = 6 V; Tj = 25 °C
60
−
120
0.3
9
feedback capacitance
transition frequency
IC = 0; VCB = 6 V; f = 1 MHz
pF
IC = 20 mA; VCE = 6 V; f = 1 GHz;
−
−
GHz
Tamb = 25 °C
GUM
maximum unilateral
power gain
IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 °C
−
19
−
dB
dB
dB
dB
dB
dB
IC = 20 mA; VCE = 6 V; f = 2 GHz;
Tamb = 25 °C
−
13
−
2
S21
insertion power gain
noise figure
IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 °C
17
−
18
−
F
Γs = Γopt ; Ic = 5 mA; VCE = 6 V;
f = 900 MHz; Tamb = 25 °C
1.1
1.6
1.9
1.6
2.1
−
Γs = Γopt ; IC = 20 mA; VCE = 6 V;
f = 900 MHz; Tamb = 25 °C
−
Γs = Γopt ; IC = 5 mA; VCE = 8 V;
f = 2 GHz; Tamb = 25 °C
−
September 1995
2
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
LIMITING VALUES
In accordance with the Absolute Maximum System (IEC 134).
SYMBOL
VCBO
PARAMETER
collector-base voltage
collector-emitter voltage
emitter-base voltage
DC collector current
total power dissipation
storage temperature
junction temperature
CONDITIONS
open emitter
MIN.
MAX.
20
UNIT
−
−
−
−
−
V
V
V
VCEO
VEBO
IC
open base
15
open collector
2.5
70
mA
mW
°C
Ptot
Tstg
Tj
up to Ts = 88 °C; note 1
300
150
175
−65
−
°C
THERMAL RESISTANCE
SYMBOL
PARAMETER
CONDITIONS
THERMAL RESISTANCE
Rth j-s
thermal resistance from junction to up to Ts = 88 °C; note 1
290 K/W
soldering point
Note
1. Ts is the temperature at the soldering point of the collector tab.
September 1995
3
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
collector cut-off current
DC current gain
CONDITIONS
IE = 0; VCB = 6 V
MIN.
TYP.
MAX.
50
UNIT
nA
ICBO
hFE
Ce
−
−
IC = 20 mA; VCE = 6 V
60
−
120
1
250
−
emitter capacitance
collector capacitance
feedback capacitance
transition frequency
IC = ic = 0; VEB = 0.5 V; f = 1 MHz
IE = ie = 0; VCB = 6 V; f = 1 MHz
IC = 0; VCB = 6 V; f = 1 MHz
IC = 20 mA; VCE = 6 V; f = 1 GHz;
pF
Cc
−
0.6
0.3
9
−
pF
Cre
fT
−
−
pF
−
−
GHz
Tamb = 25 °C
GUM
maximum unilateral
power gain (note 1)
IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 °C
−
19
−
dB
dB
dB
dB
dB
dB
dBm
IC = 20 mA; VCE = 6 V; f = 2 GHz;
Tamb = 25 °C
−
13
−
2
S21
insertion power gain
noise figure
IC = 20 mA; VCE = 6 V; f = 900 MHz;
Tamb = 25 °C
17
−
18
−
F
Γs = Γopt; IC = 5 mA; VCE = 6 V;
f = 900 MHz; Tamb = 25 °C
1.1
1.6
1.9
17
1.6
2.1
−
Γs = Γopt; IC = 20 mA; VCE = 6 V;
f = 900 MHz; Tamb = 25 °C
−
Γs = Γopt; IC = 5 mA; VCE = 6 V;
f = 2 GHz; Tamb = 25 °C
−
PL1
output power at 1 dB gain
compression
IC = 20 mA; VCE = 6 V; RL = 50 Ω;
f = 900 MHz; Tamb = 25 °C
−
−
ITO
Vo
third order intercept point
output voltage
note 2
note 3
−
−
−
26
−
−
−
dBm
mV
dB
275
−50
d2
second order intermodulation IC = 20 mA; VCE = 6 V; Vo = 75 mV;
distortion Tamb = 25 °C; f(p+q) = 810 MHz
Notes
1. GUM is the maximum unilateral power gain, assuming S12 is zero and
2
S21
2
--------------------------------------------------------------
GUM = 10 log
dB.
2
1 – S11
1 – S22
2. IC = 20 mA; VCE = 6 V; RL = 50 Ω; f = 900 MHz; Tamb = 25 °C;
fp = 900 MHz; fq = 902 MHz;
measured at f(2p−q) = 898 MHz and f(2q−p) = 904 MHz.
3. dim = −60 dB (DIN 45004B);
Vp = Vo; Vq = Vo −6 dB; Vr = Vo −6 dB;
fp = 795.25 MHz; fq = 803.25 MHz; fr = 805.25 MHz;
measured at f(p+q−r) = 793.25 MHz
September 1995
4
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
MRA670-1
MRA671
400
250
handbook, halfpage
handbook, halfpage
P
h
tot
FE
(mW)
200
150
100
300
200
100
0
50
0
−2
−1
2
10
10
1
10
10
0
50
100
150
200
I
(mA)
o
( C)
C
T
s
VCE = 6 V; Tj = 25 °C.
Fig.4 DC current gain as a function of collector
current.
Fig.3 Power derating curve.
MRA672
MRA673
0.6
12
handbook, halfpage
handbook, halfpage
C
f
re
T
V
V
= 6 V
= 3 V
CE
CE
(pF)
(GHz)
0.4
8
0.2
4
0
0
0
−1
2
10
1
10
10
4
8
12
I
(mA)
V
(V)
C
CB
IC = 0; f = 1 MHz.
f = 1 GHz; Tamb = 25 °C.
Fig.6 Transition frequency as a function of
collector current.
Fig.5 Feedback capacitance as a function of
collector-base voltage.
September 1995
5
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
In Figs 7 to 10, GUM = maximum unilateral power gain;
MSG = maximum stable gain; Gmax = maximum available
gain.
MRA675
25
MRA674
handbook, halfpage
25
handbook, halfpage
gain
(dB)
gain
(dB)
G
max
20
15
10
5
MSG
20
G
UM
G
max
15
10
5
MSG
G
UM
0
0
0
10
20
30
I
(mA)
0
10
20
30
C
I
(mA)
C
VCE = 6 V; f = 900 MHz; Tamb = 25 °C.
VCE = 6 V; f = 2 GHz; Tamb = 25 °C.
Fig.7 Gain as a function of collector current.
Fig.8 Gain as a function of collector current.
MRA676
MRA677
50
50
handbook, halfpage
handbook, halfpage
gain
(dB)
gain
(dB)
G
UM
40
40
30
G
UM
MSG
30
MSG
20
10
0
20
10
0
G
G
max
max
2
4
2
4
3
3
10
10
10
10
10
10
10
10
f (MHz)
f (MHz)
IC = 20 mA; VCE = 6 V; Tamb = 25 °C.
IC = 5 mA; VCE = 6 V; Tamb = 25 °C.
Fig.9 Gain as a function of frequency.
Fig.10 Gain as a function of frequency.
September 1995
6
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
MEA975
MEA974
−20
−20
handbook, halfpage
handbook, halfpage
d
d
2
im
(dB)
(dB)
−30
−30
−40
−50
−40
−50
−60
−70
−60
−70
0
10
20
30
40
50
(mA)
0
10
20
30
40
50
(mA)
I
I
C
C
Fig.11 Intermodulation distortion as a function of
collector current.
Fig.12 Second order intermodulation distortion as
a function of collector current.
MRA682
MRA683
5
20
G
5
20
G
handbook, halfpage
handbook, halfpage
I
= 5 mA
20 mA
f = 900 MHz
1000 MHz
F
F
C
ass
ass
min
(dB)
min
(dB)
(dB)
(dB)
G
ass
15
15
4
4
G
ass
2000 MHz
10
5
10
5
3
3
2
2000 MHz
2
F
1000 MHz
min
20 mA
F
min
0
0
1
0
1
0
5 mA
900 MHz
500 MHz
−5
−5
2
4
2
3
10
10
1
10
10
10
I
(mA)
C
f (MHz)
V CE = 6 V; Tamb = 25 °C.
VCE = 6 V; Tamb = 25 °C.
Fig.13 Minimum noise figure and associated
available gain as functions of collector
current.
Fig.14 Minimum noise figure and associated
available gain as functions of frequency.
September 1995
7
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
stability
90°
circle
1.0
1
0.8
135°
0.5
45°
2
pot. unst.
0.6
region
0.4
0.2
0
F
= 1. 1 dB
min
0.2
5
Γ
OPT
0.2
0.5
1
2
5
180°
0°
0
F = 1.5 dB
F = 2 dB
5
0.2
F = 3 dB
0.5
2
−45°
−135°
1
MRA684
1.0
−90°
IC = 5 mA; VCE = 6 V;
f = 900 MHz; Zo = 50 Ω.
Fig.15 Noise circle figure.
90°
1.0
0.8
0.6
0.4
0.2
0
1
135°
45°
2
0.5
F = 3 dB
F = 2.5 dB
F = 2 dB
OPT
0.2
Γ
5
G
= 13 dB
F
= 1. 9 dB
1
max
min
Γ
0.2
0.5
2
5
MS
180°
0°
0
G = 12 dB
G = 11 dB
5
0.2
G = 10 dB
0.5
2
−45°
−135°
1
MRA685
1.0
−90°
IC = 5 mA; VCE = 6 V;
f = 2 GHz; Zo = 50 Ω.
Fig.16 Noise circle figure.
8
September 1995
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
90°
1.0
1
0.8
135°
45°
2
0.5
0.6
3 GHz
0.4
0.2
5
0.2
0.2
0.5
1
2
5
180°
0°
0
0
40 MHz
5
0.2
0.5
2
−45°
−135°
1
MRA678
1.0
−90°
IC = 20 mA; VCE = 6 V.
Zo = 50 Ω.
Fig.17 Common emitter input reflection coefficient (S11).
90°
135°
45°
40 MHz
40
3 GHz
180°
0°
50
30
20
10
−135°
−45°
MRA679
−90°
IC = 20 mA; VCE = 6 V.
Fig.18 Common emitter forward transmission coefficient (S21).
September 1995
9
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
90°
135°
45°
3 GHz
40 MHz
180°
0°
0.25 0.20 0.15 0.10 0.05
−135°
−45°
MRA680
−90°
IC = 20 mA; VCE = 6 V.
Fig.19 Common emitter reverse transmission coefficient (S12).
90°
1.0
0.8
0.6
0.4
0.2
0
1
135°
45°
2
0.5
0.2
5
0.2
0.5
1
2
5
180°
0°
0
40 MHz
5
3 GHz
0.2
0.5
2
−45°
−135°
1
MRA681
1.0
−90°
IC = 20 mA; VCE = 6 V.
Zo = 50 Ω.
Fig.20 Common emitter output reflection coefficient (S22).
September 1995
10
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
PACKAGE OUTLINES
Plastic surface mounted package; 4 leads
SOT143B
D
B
E
A
X
y
H
v
M
A
E
e
b
p
w
M
B
4
3
Q
A
A
1
c
1
2
L
p
b
1
e
1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
E
1.1
0.9
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.45
0.15
0.55
0.45
0.1
mm
1.9
1.7
0.2
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-02-28
SOT143B
September 1995
11
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
Plastic surface mounted package; reverse pinning; 4 leads
SOT143R
D
B
E
A
X
y
H
v
M
A
E
e
b
w
M
B
p
3
4
Q
A
A
1
c
2
1
L
p
b
1
e
1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
A
1
max
UNIT
A
b
b
c
D
E
e
e
H
L
p
Q
v
w
y
p
1
1
E
1.1
0.9
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
2.5
2.1
0.55
0.25
0.45
0.25
0.1
mm
1.9
1.7
0.2
0.1
0.1
REFERENCES
JEDEC
EUROPEAN
PROJECTION
OUTLINE
VERSION
ISSUE DATE
IEC
EIAJ
97-03-10
SOT143R
September 1995
12
Philips Semiconductors
Product specification
NPN 9 GHz wideband transistor
BFG520; BFG520/X; BFG520/XR
DEFINITIONS
Data Sheet Status
Objective specification
Preliminary specification
Product specification
This data sheet contains target or goal specifications for product development.
This data sheet contains preliminary data; supplementary data may be published later.
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
September 1995
13
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