BDX68B [ISC]
Silicon PNP Darlington Power Transistor; 硅PNP达林顿功率晶体管
| 型号： | BDX68B |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon PNP Darlington Power Transistor |
| 文件： | 总2页 (文件大小：202K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
BDX68/A/B/C
DESCRIPTION
·High DC Current Gain-
: hFE= 1000(Min)@ IC= -20A
·Low Saturation Voltage
·Complement to Type BDX69/A/B/C
APPLICATIONS
·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
-80
UNIT
BDX68
BDX68A
BDX68B
BDX68C
BDX68
-100
-120
-140
-60
VCBO
Collector-Base Voltage
V
BDX68A
BDX68B
BDX68C
-80
VCEO
Collector-Emitter Voltage
Emitter-Base Voltage
V
-100
-120
-5
VEBO
IC
ICM
IB
V
A
Collector Current-Continuous
Collector Current-Peak
Base Current
-25
-40
A
-500
150
mA
W
℃
℃
Collector Power Dissipation
@ TC=25℃
PC
TJ
Junction Temperature
200
Storage Temperature Range
-65~200
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance,Junction to Case
0.875 ℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
BDX68/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCE(
PARAMETER
CONDITIONS
MIN
-60
TYP. MAX UNIT
BDX68
BDX68A
BDX68B
BDX68C
-80
Collector-Emitter
Sustaining Voltage
IC= -100mA; L= 25mH
V
-100
-120
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
BDX68
IC= -20A; IB= -80mA
IC= -20A; VCE= -3V
-2.0
-2.5
V
V
)
sat
VBE(
)
on
VCB= -80V; IE= 0
VCB= -40V; IE= 0; TC=200℃
-2.0
-10
VCB= -100V; IE= 0
VCB= -50V; IE= 0; TC=200℃
-2.0
-10
BDX68A
Collector
ICBO
mA
Cutoff Current
VCB= -120V; IE= 0
VCB= -60V; IE= 0TC=200℃
-2.0
-10
BDX68B
V
B= -140V; IE= 0
-2.0
-10
BDX68C
BDX68
VB= -70V; IE= 0; TC=200℃
VCE= -30V; IB= 0
BDX68A
Collector
VCE= -40V; IB= 0
VCE= -50V; IB= 0
ICEO
-6.0
-10
mA
mA
Cutoff Current
BDX68B
BDX68C
Emitter Cutoff Current
DC Current Gain
VCE= -60V; IB= 0
IEBO
hFE-1
hFE-2
hFE-3
COB
VEB= -5V; IC= 0
IC= -5A; VCE= -3V
3000
DC Current Gain
IC= -20A; VCE= -3V
IC= -30A; VCE= -3V
IE= 0 ; VCB= -10V, ftest= 1.0MHz
1000
DC Current Gain
1000
600
Output Capacitance
pF
2
isc Website：www.iscsemi.cn
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