BDX69B [ISC]
Silicon NPN Darlington Power Transistor; 硅NPN达林顿功率晶体管
| 型号： | BDX69B |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Darlington Power Transistor |
| 文件： | 总2页 (文件大小：202K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
BDX69/A/B/C
DESCRIPTION
·High DC Current Gain-
: hFE= 1000(Min)@ IC= 20A
·Low Saturation Voltage
·Complement to Type BDX68/A/B/C
APPLICATIONS
·Designed for audio output stages and general amplifier
and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
80
UNIT
BDX69
BDX69A
BDX69B
BDX69C
BDX69
100
120
140
60
VCBO
Collector-Base Voltage
V
BDX69A
BDX69B
BDX69C
80
VCEO
Collector-Emitter Voltage
Emitter-Base Voltage
V
100
120
5
VEBO
IC
ICM
IB
V
A
Collector Current-Continuous
Collector Current-Peak
Base Current
25
40
A
500
150
200
-65~200
mA
W
℃
℃
Collector Power Dissipation
@ TC=25℃
PC
TJ
Junction Temperature
Storage Temperature Range
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance,Junction to Case
0.875 ℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
BDX69/A/B/C
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCE(
PARAMETER
CONDITIONS
MIN
60
TYP. MAX UNIT
BDX69
BDX69A
BDX69B
BDX69C
80
Collector-Emitter
Sustaining Voltage
IC= 100mA ; L= 25mH
V
100
120
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
BDX69
IC= 20A; IB= 80mA
IC= 20A; VCE= 3V
2.0
2.5
V
V
)
sat
VBE(
)
on
VCB= 80V; IE= 0
VCB= 40V; IE= 0; TC=200℃
2.0
10
VCB= 100V; IE= 0
VCB= 50V; IE= 0; TC=200℃
2.0
10
BDX69A
Collector
ICBO
mA
Cutoff Current
VCB= 120V; IE= 0
VCB= 60V; IE= 0TC=00℃
2.0
10
BDX69B
V
B= 14V; IE= 0
2.0
10
BDX69C
BDX69
VB= 70V; IE= 0; TC=200℃
VCE= 30V; IB=0
BDX69A
Collector
VCE= 40V; IB=0
VCE= 50V; IB=0
ICEO
6.0
10
mA
mA
Cutoff Current
BDX69B
BDX69C
Emitter Cutoff Current
DC Current Gain
VCE= 60V; IB=0
IEBO
hFE-1
hFE-2
hFE-3
COB
VEB= 5V; IC=0
IC= 5A; VCE= 3V
3000
DC Current Gain
IC= 20A; VCE= 3V
IC= 30A; VCE= 3V
IE= 0 ; VCB= 10V, ftest= 1.0MHz
1000
DC Current Gain
4000
600
Output Capacitance
pF
2
isc Website：www.iscsemi.cn
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