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BDX68C [ISC]

Silicon PNP Darlington Power Transistor; 硅PNP达林顿功率晶体管
BDX68C
型号： BDX68C
厂家： INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述：

Silicon PNP Darlington Power Transistor
硅PNP达林顿功率晶体管

晶体 晶体管
文件： 总2页 (文件大小：202K)
中文：  中文翻译
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INCHANGE Semiconductor  
isc Product Specification  
isc Silicon PNP Darlington Power Transistor  
BDX68/A/B/C  
DESCRIPTION  
·High DC Current Gain-  
: hFE= 1000(Min)@ IC= -20A  
·Low Saturation Voltage  
·Complement to Type BDX69/A/B/C  
APPLICATIONS  
·Designed for audio output stages and general amplifier  
and switching applications  
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)  
SYMBOL  
PARAMETER  
VALUE  
-80  
UNIT  
BDX68  
BDX68A  
BDX68B  
BDX68C  
BDX68  
-100  
-120  
-140  
-60  
VCBO  
Collector-Base Voltage  
V
BDX68A  
BDX68B  
BDX68C  
-80  
VCEO  
Collector-Emitter Voltage  
Emitter-Base Voltage  
V
-100  
-120  
-5  
VEBO  
IC  
ICM  
IB  
V
A
Collector Current-Continuous  
Collector Current-Peak  
Base Current  
-25  
-40  
A
-500  
150  
mA  
W
℃
℃
Collector Power Dissipation  
@ TC=25℃  
PC  
TJ  
Junction Temperature  
200  
Storage Temperature Range  
-65~200  
Tstg  
THERMAL CHARACTERISTICS  
SYMBOL  
PARAMETER  
MAX  
UNIT  
Thermal Resistance,Junction to Case  
0.875 ℃/W  
Rth j-c  
isc Website：www.iscsemi.cn  
INCHANGE Semiconductor  
isc Product Specification  
isc Silicon PNP Darlington Power Transistor  
BDX68/A/B/C  
ELECTRICAL CHARACTERISTICS  
TC=25℃ unless otherwise specified  
SYMBOL  
VCEO(SUS)  
VCE(  
PARAMETER  
CONDITIONS  
MIN  
-60  
TYP. MAX UNIT  
BDX68  
BDX68A  
BDX68B  
BDX68C  
-80  
Collector-Emitter  
Sustaining Voltage  
IC= -100mA; L= 25mH  
V
-100  
-120  
Collector-Emitter Saturation Voltage  
Base-Emitter On Voltage  
BDX68  
IC= -20A; IB= -80mA  
IC= -20A; VCE= -3V  
-2.0  
-2.5  
V
V
)
sat  
VBE(  
)
on  
VCB= -80V; IE= 0  
VCB= -40V; IE= 0; TC=200℃  
-2.0  
-10  
VCB= -100V; IE= 0  
VCB= -50V; IE= 0; TC=200℃  
-2.0  
-10  
BDX68A  
Collector  
ICBO  
mA  
Cutoff Current  
VCB= -120V; IE= 0  
VCB= -60V; IE= 0TC=200℃  
-2.0  
-10  
BDX68B  
V
B= -140V; IE= 0  
-2.0  
-10  
BDX68C  
BDX68  
VB= -70V; IE= 0; TC=200℃  
VCE= -30V; IB= 0  
BDX68A  
Collector  
VCE= -40V; IB= 0  
VCE= -50V; IB= 0  
ICEO  
-6.0  
-10  
mA  
mA  
Cutoff Current  
BDX68B  
BDX68C  
Emitter Cutoff Current  
DC Current Gain  
VCE= -60V; IB= 0  
IEBO  
hFE-1  
hFE-2  
hFE-3  
COB  
VEB= -5V; IC= 0  
IC= -5A; VCE= -3V  
3000  
DC Current Gain  
IC= -20A; VCE= -3V  
IC= -30A; VCE= -3V  
IE= 0 ; VCB= -10V, ftest= 1.0MHz  
1000  
DC Current Gain  
1000  
600  
Output Capacitance  
pF  
2
isc Website：www.iscsemi.cn  

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