BD951F [ISC]
Transistor;
| 型号： | BD951F |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Transistor |
| 文件： | 总2页 (文件大小：105K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BD949F/951F/953F/955F
DESCRIPTION
·DC Current Gain-
: hFE= 40(Min)@ IC= 500mA
·Complement to Type BD950F/952F/954F/956F
APPLICATIONS
·Designed for power amplifier and switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
60
UNIT
BD949F
BD951F
BD953F
BD955F
BD949F
BD951F
BD953F
BD955F
80
VCBO
Collector-Base Voltage
V
100
120
60
80
VCEO
Collector-Emitter Voltage
Emitter-Base Voltage
V
100
120
5
VEBO
IC
V
A
Collector Current-Continuous
Collector Current-Peak
5
ICM
PC
8
A
Collector Power Dissipation
@ TC=25℃
22
W
℃
℃
TJ
Junction Temperature
150
-65~150
Storage Temperature Range
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance,Junction to Case
8.12
℃/W
Rth j-c
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
BD949F/951F/953F/955F
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCE(
PARAMETER
CONDITIONS
MIN
60
TYP.
MAX UNIT
BD949F
BD951F
BD953F
BD955F
80
Collector-Emitter
Sustaining Voltage
IC= 100mA ; IB= 0
V
100
120
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Collector Cutoff Current
Emitter Cutoff Current
IC= 2A; IB= 0.2A
IC= 2A; VCE= 4V
1.0
1.4
V
)
sat
V
VBE(
)
on
VCB= VCBOmax; IE= 0
0.05
1
ICBO
mA
mA
mA
VCB= 1/2VCBOmax; IE= 0,TJ=150℃
ICEO
IEBO
hFE-1
hFE-2
fT
VCE= 1/2VCEOmax; IB= 0
0.1
0.2
VEB= 5V; IC= 0
DC Current Gain
IC= 500mA ; VCE= 4V
IC= 2A ; VCE= 4V
40
3
DC Current Gain
20
Current-Gain—Bandwidth Product
IC= 500mA ; VCE= 4V
MHz
Switching Times
Turn-On Time
Turn-Off Time
0.3
1.5
μs
μs
ton
toff
IC= 1.0A; IB1= -IB2= 0.1A
2
isc Website：www.iscsemi.cn
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