BD652 [ISC]
isc Silicon PNP Darlington Power Transistor; ISC的硅PNP达林顿功率晶体管
| 型号： | BD652 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon PNP Darlington Power Transistor |
| 文件： | 总2页 (文件大小：96K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
BD652
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -120V(Min)
·High DC Current Gain
: hFE= 750(Min) @IC= -3A
·Low Saturation Voltage
·Complement to Type BD651
APPLICATIONS
·Designed for use as complementary AF push-pull output
stage applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
-140
-120
-5
UNIT
V
V
V
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
-8
A
ICP
-12
A
IB
-0.3
2
A
Collector Power Dissipation
@ Ta=25℃
PC
W
Collector Power Dissipation
@ TC=25℃
62.5
150
TJ
Junction Temperature
℃
℃
Storage Temperature Range
-65~150
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
2
UNIT
℃/W
℃/W
Thermal Resistance,Junction to Case
Thermal Resistance,Junction to Ambient
Rth j-c
62.5
Rth j-a
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Darlington Power Transistor
BD652
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCE(
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
IC= -30mA; IB= 0
-120
V
V
V
V
V
IC= -3A; IB= -12mA
IC= -5A; IB= -50mA
IC= -5A; IB= -50mA
IC= -3A ; VCE= -3V
VCB= -120V; IE= 0
VCB= -70V; IE= 0; TC= 150℃
VCE= -60V; IB= 0
-2.0
-2.5
-3.0
-2.5
-0.2
-2.0
-0.5
-5
)-1
sat
VCE(
)-2
sat
VBE(
)
sat
VBE(
)
on
ICBO
Collector Cutoff Current
mA
ICEO
IEBO
hFE
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
mA
mA
VEB= -5V; IC= 0
IC= -3A ; VCE= -3V
750
2
isc Website：www.iscsemi.cn
相关型号：
BD652-S
Power Bipolar Transistor, 8A I(C), 120V V(BR)CEO, 1-Element, PNP, Silicon, TO-220AB, Plastic/Epoxy, 3 Pin, TO-220, 3 PIN
BOURNS
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