BD316 [ISC]
Silicon PNP Power Transistor; 硅PNP功率晶体管
| 型号： | BD316 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon PNP Power Transistor |
| 文件： | 总2页 (文件大小：193K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
BD316
DESCRIPTION
·Excellent Safe Operating Area
·DC Current Gain-hFE= 25(Min.)@IC = -8A
·Collector-Emitter Saturation Voltage-
: VCE(sat)= -1.0 V(Max)@ IC = -8A
·Complement to Type BD315
APPLICATIONS
·Designed for high quality amplifiers operating up to 100 watts
into 4 ohm load.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
VALUE
-80
UNIT
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
-80
V
-7
V
Collector Current-Continuous
Collector Current-Peak
-16
A
ICM
-20
A
IB
Base Current-Continuous
Collector Power Dissipation@TC=25℃
Junction Temperature
-5
A
PC
200
200
-65~200
W
℃
℃
TJ
Storage Temperature
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Thermal Resistance,Junction to Case
0.875
℃/W
Rth j-c
isc Website：www.iscsemi.cn
1
INCHANGE Semiconductor
isc Product Specification
isc Silicon PNP Power Transistor
BD316
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Sustaining Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
CONDITIONS
MIN
MAX
UNIT
V
VCEO(SUS)
IC=-200mA; IB=0
-80
IC= -8A; IB= -0.8A
IC= -8A; IB= -0.8A
IC= -8A; VCE= -2V
VCB= -80V; IB= 0
VEB= -7V; IC= 0
-1.0
-1.8
-1.5
-1.0
-1.0
V
VCE
(sat)
V
VBE
(sat)
V
VBE(
)
on
ICBO
mA
mA
IEBO
hFE-1
hFE-2
fT
Emitter Cutoff Current
DC Current Gain
IC= -8A; VCE= -4V
IC= -0AVCE= -4V
IC= -1A; VCE= -20V
25
15
1
DC Current Gain
Current Gain-Bandwidth Product
MHz
isc Website：www.iscsemi.cn
2
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