BD317 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | BD317 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BD317
DESCRIPTION
·With TO-3 package
·High DC current gain
·Excellent safe operating area
·Complement to type BD318
APPLICATIONS
·Designed for high power amplifiers
PINNING (See Fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-3) and symbol
3
Collector
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALU
100
UNIT
V
Open emitter
Open base
100
V
Open collector
7
V
16
A
ICM
Collector current(peak)
Base current
20
A
IB
5
A
PD
Total power dissipation
Junction temperature
Storage temperature
TC=25℃
200
W
℃
℃
Tj
-65~200
-65~200
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal resistance from junction to case
0.875
℃/W
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BD317
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat
VBEsat
VBE(on)
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage IC=0.2A ; IB=0
Collector-emitter saturation voltage IC=8A ;IB=0.8A
100
1.0
1.8
1.5
1.0
1.0
V
Base-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=8A ;IB=0.8A
V
IC=8A ;VCE=2.0V
VCB=100V;IE=0
V
mA
mA
IEBO
VEB=7V; IC=0
hFE-1
IC=5A ; VCE=4V
25
15
hFE-2
DC current gain
IC=10A ; VCE=4V
IC=1A ; VCE=20V,f=0.5MHz
fT
Trnsition frequency
1.0
MHz
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
BD317
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
相关型号：
BD321A-18
Small Signal Bipolar Transistor, 0.5A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-18
ZETEX
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