BD318 [ISC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | BD318 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总3页 (文件大小：117K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
BD318
DESCRIPTION
·With TO-3 package
·High DC current gain
·Excellent safe operating area
·Complement to type BD317
APPLICATIONS
·Designed for high power amplifiers
PINNING (See Fig.2)
PIN
1
DESCRIPTION
Base
Emitter
2
Fig.1 simplified outline (TO-3) and symbol
Collector
3
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
-100
-100
-7
UNIT
V
Open base
V
Open collector
V
-16
A
ICM
Collector current(peak)
Base current
-20
A
IB
-5
A
PT
Total power dissipation
Junction temperature
Storage temperature
TC=25℃
200
W
℃
℃
Tj
-65~200
-65~200
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
MAX
UNIT
Rth j-c
Thermal resistance from junction to case
0.875
℃/W
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
BD318
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage IC=-0.2A ; IB=0
Collector-emitter saturation voltage IC=-8A ;IB=-0.8A
-100
-1.0
-1.8
-1.5
-1.0
-1.0
V
VBEsat
Base-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=-8A ;IB=-0.8A
V
IC=-8A ;VCE=-2.0V
VCB=100V;IE=0
V
VBE(
)
on
ICBO
mA
mA
IEBO
hFE-1
hFE-2
fT
VEB=-7V; IC=0
IC=-5A ; VCE=-4V
IC=-10A ; VCE=-4V
IC=-1A ; VCE=-20V,f=0.z
25
15
1
DC urrent gain
Transition frequency
MHz
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
BD318
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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