BD132 [ISC]
Silicon PNP Power Transistors; 硅PNP功率晶体管
| 型号： | BD132 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon PNP Power Transistors |
| 文件： | 总3页 (文件大小：40K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
BD132
DESCRIPTION
·
·Complement to type BD131
·With TO-126 package
·High current (Max:- 3A)
·Low voltage (Max: -45V)
APPLICATIONS
·For general purpose power applications
PINNING
PIN
1
DESCRIPTION
Emitter
Collector;connected to
mounting base
2
3
Base
Absolute maximum ratings (Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter -base voltage
Collector current (DC)
Collector current-Peak
Base current-Peak
CONDITIONS
VALUE
-45
UNIT
V
Open emitter
Open base
-45
V
Open collector
-4
V
-3
A
ICM
-6
A
IBM
-0.5
15
A
Pt
Total power dissipation
Junction temperature
Storage temperature
T
mb≤60℃
W
℃
℃
Tj
150
-65~150
Tstg
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Thermal resistance from junction to ambient
Thermal resistance from junction to mounting base
VALUE
100
UNIT
K/W
K/W
Rth j-a
Rth j-mb
6
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
BD132
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEsat-1
VCEsat-2
VBEsat-1
VBEsat-2
PARAMETER
CONDITIONS
MIN
TYP.
MAX
-0.3
-0.7
-1.2
-1.5
-50
UNIT
V
Collector-emitter saturation voltage IC=-0.5A; IB=-50mA
Collector-emitter saturation voltage IC=-2A; IB=-0.2A
V
Base-emitter saturation voltage
Base-emitter saturation voltage
IC=-0.5A; IB=-50mA
IC=-2A; IB=-0.2A
V
V
VCB=-50V; IE=0
nA
μA
nA
ICBO
Collector cut-off current
VCB=-50V; IE=0 Tj=150℃
VEB=-5V; IC=0
-10
IEBO
hFE-1
hFE-2
fT
Emitter cut-off current
DC current gain
-50
IC=-0.5A ; VCE=-12V
IC=-2A ; VCE=-1V
40
20
60
DC current gain
Transition frequency
IC=-0.25A; VCE=-5V ;f=100MHz
MHz
2
Inchange Semiconductor
Product Specification
Silicon PNP Power Transistors
BD132
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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