BD135 [STMICROELECTRONICS]
NPN SILICON TRANSISTORS; NPN硅晶体管
| 型号： | BD135 |
| 厂家： | 
ST |
| 描述： | NPN SILICON TRANSISTORS |
| 文件： | 总4页 (文件大小：36K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
BD135
BD139
NPN SILICON TRANSISTORS
■
STMicroelectronics PREFERRED
SALESTYPES
DESCRIPTION
The BD135 and BD139 are silicon epitaxial
planar NPN transistors in Jedec SOT-32 plastic
package, designed for audio amplifiers and
drivers utilizing complementary or quasi
compementary circuits.
The complementary PNP types are BD136 and
BD140 respectively.
1
2
3
SOT-32
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
BD135
45
BD139
80
VCBO
VCEO
VEBO
IC
Collector-Base Voltage (IE = 0)
Collector-Emitter Voltage (IB = 0)
Emitter-Base Voltage (IC = 0)
Collector Current
V
V
45
80
5
1.5
V
A
ICM
IB
Collector Peak Current
3
A
Base Current
0.5
A
Total Dissipation at Tc ≤ 25 oC
Ptot
Ptot
Tstg
Tj
12.5
1.25
-65 to 150
150
W
W
oC
oC
o
Total Dissipation at Tamb ≤ 25 C
Storage Temperature
Max. Operating Junction Temperature
1/4
May 1999
BD135 / BD139
THERMAL DATA
Rthj-case Thermal Resistance Junction-case
Max
10
oC/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
ICBO
Collector Cut-off
Current (IE = 0)
VCB = 30 V
VCB = 30 V
0.1
10
µA
µA
TC = 125 oC
IEBO
Emitter Cut-off Current VEB = 5 V
(IC = 0)
10
µA
VCEO(sus) Collector-Emitter
Sustaining Voltage
IC = 30 mA
for BD135
for BD139
45
80
V
V
VCE(sat)
Collector-Emitter
Saturation Voltage
IC = 0.5 A
IB = 0.05 A
VCE = 2 V
0.5
1
V
VBE
hFE
Base-Emitter Voltage
DC Current Gain
IC = 0.5 A
V
IC = 5 mA
IC = 0.5 A
IC = 150 mA VCE = 2 V
IC = 150 mA VCE = 2 V
for BD139 group 10
VCE = 2 V
VCE = 2 V
25
25
40
250
160
hFE
hFE Groups
63
Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
Safe Operating Area
2/4
BD135 / BD139
SOT-32 (TO-126) MECHANICAL DATA
mm
inch
TYP.
DIM.
MIN.
7.4
TYP.
MAX.
7.8
MIN.
0.291
0.413
0.028
0.019
0.040
0.039
0.606
MAX.
0.307
0.445
0.035
0.030
0.106
0.050
0.629
A
B
10.5
0.7
10.8
0.9
b
b1
C
0.49
2.4
0.75
2.7
c1
D
1.0
1.3
15.4
16.0
e
2.2
3.8
0.087
0.150
e3
F
4.15
3
4.65
0.163
0.118
0.183
G
H
3.2
0.126
0.100
2.54
H2
c1
0016114
3/4
BD135 / BD139
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences
of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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1999 STMicroelectronics – Printed in Italy – All Rights Reserved
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.
4/4
相关型号：
BD135-16
Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, TO-126, 3 PIN
CENTRAL
BD135-16-BP
Power Bipolar Transistor, 1.5A I(C), 45V V(BR)CEO, 1-Element, NPN, Silicon, TO-126, Plastic/Epoxy, 3 Pin, ROHS COMPLIANT, PLASTIC PACKAGE-3
MCC
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