2SD986K [ISC]
Transistor;
| 型号： | 2SD986K |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Transistor |
| 文件： | 总3页 (文件大小：124K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD985 2SD986
DESCRIPTION
·
·With TO-126 package
·Complement to type 2SB794/795
·DARLINGTON
·High DC current gain
·Low collector saturation voltage
APPLICATIONS
·For low frequency power amplifier
and power switching applications
PINNING
PIN
1
DESCRIPTION
Emitter
Collector;connected to
mounting base
2
3
Base
Absolute maximum ratings (Ta=25℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
150
60
UNIT
VCBO
Collector-base voltage
Open emitter
Open base
V
2SD985
2SD986
VCEO
Collector-emitter voltage
V
80
VEBO
IC
ICM
IB
Emitter -base voltage
Collector current
Open collector
8
V
A
A
A
±1.5
±3.0
0.15
Collector current-Peak
Base current
Ta=25℃
TC=25℃
1.0
PT
Total power dissipation
W
10
Tj
Junction temperature
Storage temperature
150
℃
℃
Tstg
-55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD985 2SD986
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEsat
PARAMETER
CONDITIONS
MIN
TYP.
MAX
1.5
UNIT
V
Collector-emitter saturation voltage IC=1.0A; IB=1.0mA
VBEsat
Base-emitter saturation voltage
IC=1.0A; IB=1.0mA
VCB=60V; IE=0
2.0
V
2SD985
ICBO
Collector cut-off current
10
μA
2SD986
VCB=80V; IE=0
IEBO
hFE-1
hFE-2
Emitter cut-off current
DC current gain
VEB=5V; IC=0
2.0
mA
IC=0.5A ; VCE=2V
IC=1.0A ; VCE=2V
1000
2000
DC current gain
30000
Switching times
ton
ts
tf
Turn-on time
0.5
1.0
1.0
μs
μs
μs
IC=1.0A;IB1=-IB2=1.0mA
VCC=50V; RL=50Ω
Storage time
Fall time
hFE-2 Classifications
M
L
K
2000-5000
4000-10000 8000-30000
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD985 2SD986
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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