2SD992-Z [TYSEMI]
Low VCE(sat). Collector-base voltage VCBO 30 V; 低VCE （SAT） 。集电极 - 基极电压VCBO 30 V
| 型号： | 2SD992-Z |
| 厂家： | 
TY Semiconductor Co., Ltd |
| 描述： | Low VCE(sat). Collector-base voltage VCBO 30 V |
| 文件： | 总1页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
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Product specification
2SD992-Z
TO-252
Unit: mm
6.50+0.15
2.30+0.1
Features
-0.15
-0.1
5.30+0.2
0.50+0.8
-0.7
-0.2
Low VCE(sat).
0.127
max
0.80+0.1
-0.1
0.60+0.1
2.3
4.60+0.15
-0.1
1 Base
-0.15
2 Collector
3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
30
30
V
5
V
Collector current (DC)
Collector Current (pulse) *
Total power dissipation
Junction temperature
Storage temperature
2
A
ICP
3
A
PT
2
W
Tj
150
Tstg
-55 to +150
* Pulse Test PW
10ms, Duty Cycle
50%.
Electrical Characteristics Ta = 25
Parameter
Symbol
Testconditons
Min
Typ
Max
10
Unit
nA
Collector cutoff current
ICBO
VCB = 20 V, IE = 0
VCE = 0.5 V, IC = 0.1 A
VCE = 0.5 V, IC = 2.0 A
35
50
200
DC current gain *
hFE
Collector saturation voltage *
Base saturation voltage *
VCE(sat) IC = 2.0 A, IB = 40 mA
VBE(sat) IC = 2.0 A, IB = 40 mA
0.3
0.5
1.5
V
V
0.95
* Pulsed: PW
350 ìs, duty cycle
2%
hFE Classification
Marking
N
M
L
K
hFE
35 80
60 120
80 120
100 200
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