2SD991 [ETC]
TRANSISTOR | BJT | DARLINGTON | NPN | 300V V(BR)CEO | 6A I(C) | TO-220AB ; 晶体管| BJT |达林顿| NPN | 300V V（ BR ） CEO | 6A I（C ） | TO- 220AB
| 型号： | 2SD991 |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | DARLINGTON | NPN | 300V V(BR)CEO | 6A I(C) | TO-220AB
|
| 文件： | 总4页 (文件大小：34K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD991(K)
Silicon NPN Triple Diffused
Application
High voltage switching, igniter
Outline
TO-220AB
2
1
1. Base
2. Collector
(Flange)
3. Emitter
1
3000 Ω 150 Ω
(Typ) (Typ)
2
3
3
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
Ratings
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
300
300
V
7
V
6
A
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
Note: 1. Value at TC = 25°C.
IC(peak)
PC*1
Tj
10
A
50
W
°C
°C
150
Tstg
–55 to +150
2SD991(K)
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
V(BR)CBO
VCEO(sus)
V(BR)EBO
300
—
500
V
IC = 0.1 mA, IE = 0
Collector to emitter sustain
voltage
300
—
—
V
IC = 4 A, PW = 50 µs,
f = 50Hz, L = 10 mH
Emitter to base breakdown
voltage
7
—
—
—
—
—
—
V
IE = 100 mA, IC = 0
IE = 50 mA, IC = 0
—
—
500
—
—
V
Collector cutoff current
DC current transfer ratio
ICEO
hFE
100
—
µA
VCE = 300 V, RBE = _
VCE = 2 V, IC = 4 A*1
IC = 4 A, IB = 40 mA*1
Collector to emitter saturation VCE(sat)
voltage
1.5
V
V
Base to emitter saturation
voltage
VBE(sat)
—
—
2.0
Turn on time
ton
toff
—
—
2.0
23
—
—
µs
µs
IC = 4 A, IB1 = –IB2 = 40 mA
Turn off time
Note: 1. Pulse test.
Maximum Collector Dissipation Curve
60
40
20
0
50
100
150
Case temperature TC (°C)
Area of Safe Operation
20
10
5
iC (peak)
Ta = 25°C
IC (max)
2
1.0
0.5
DC Operation (T
0.2
0.1
0.05
C
=
25
0.02
0.01
°
C)
0.005
0.003
0.5 1.0
2
5 10 20 50 100200 500
Collector to emitter voltage VCE (V)
2
2SD991(K)
Typical Output Characteristics
TC = 25°C
5
4
3
2
1
IB = 0
0
1
2
3
4
5
Collector to emitter voltage VCE (V)
Saturation Voltage vs. Collector Current
10
5
TC = 25°C
Pulse
lC/lB = 100
2
1.0
0.5
VBE (sat)
200
lC/lB = 200
100
VCE (sat)
0.2
0.1
0.1 0.2
0.5 1.0
2
5
10
Collector current IC (A)
DC Current Transfer Ratio
vs. Collector Current
10,000
5,000
2,000
1,000
500
VCE = 2 V
200
100
0.1 0.2
0.5 1.0
2
5
10
Collector current IC (A)
3
2SD991(K)
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of this document without Hitachi’s permission.
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other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
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or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
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U S A
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4
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