2SD725 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SD725 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：115K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD725
DESCRIPTION
·
·With TO-3 package
·High voltage ,high speed
·Low collector saturation voltage
APPLICATIONS
·For high voltage,power switching and
TV horizontal output applications
PINNING(see fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Collector
Fig.1 simplified outline (TO-3) and symbol
3
Absolute maximum ratings(Ta=℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
1500
600
UNIT
V
Open emitter
Open base
V
Open collector
5
V
7
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
50
W
℃
℃
Tj
150
Tstg
-65~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD725
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
V(BR)EBO
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
600
5
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage IC=0.1A; IB=0
Emitter-base breakdown voltage
IE=1mA; IC=0
V
Collector-emitter saturation voltage IC=5 A;IB=1 A
5.0
1.5
10
V
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=5 A;IB=1 A
VCB=800V;IE=0
VEB=5V; IC=0
IC=1A ; VCE=5V
IC=5A ; VCE=5V
V
μA
mA
IEBO
0.1
36
hFE-1
8
5
hFE-2
DC current gain
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD725
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
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