2SD726C [ISC]
Transistor;
| 型号： | 2SD726C |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Transistor 晶体 晶体管 |
| 文件： | 总2页 (文件大小：104K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPNPower Transistor
2SD726
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO = 80V(Min)
·High Power Dissipation
·Complement to Type 2SB690
APPLICATIONS
·Designed for low frequency power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
UNIT
V
100
80
V
5
V
Collector Current-Continuous
Collector Current-Peak
4
8
A
ICM
A
Total Power Dissipation
@ TC=25℃
PC
40
W
℃
℃
TJ
Junction Temperature
150
Storage Temperature Range
-45~150
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPNPower Transistor
2SD726
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)EBO
PARAMETER
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
CONDITIONS
MIN
80
5
TYP.
MAX
UNIT
V
IC= 50mA; RBE= ∞
IE= 10μA; IC= 0
IC= 2A; IB= 0.2A
V
2.0
1.5
0.1
200
V
VCE
(sat)
(on)
IC= 1A; VCE= 5V
VCB= 80V; IE= 0
V
VBE
ICBO
Collector Cutoff Current
mA
hFE-1
hFE-2
COB
fT
DC Current Gain
IC= 1A; VCE= 5V
IC= 0.1A; VCE= 5V
IE= 0; VCB= 20V; f= 1MHz
IC= 0.5A; VCE= 5V
60
35
DC Current Gain
Collector Output Capacitance
Current-Gain—Bandwidth Product
40
10
pF
MHz
hFE-1 Classifications
B
C
60-120
100-200
2
isc Website：www.iscsemi.cn
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