2SD727 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SD727 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总3页 (文件大小：119K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD728
DESCRIPTION
·With TO-3PN package
·Complement to type 2SB692
APPLICATIONS
·For low frequency power amplifier
and power switching applications
PINNING
PIN
1
DESCRIPTION
Base
Collector;connected to
mounting base
2
Fig.1 simplified outline (TO-3PN) and symbol
3
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
150
150
5
UNIT
V
Open emitter
Open base
V
Open collector
V
6
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
70
W
℃
℃
Tj
150
-55~150
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD728
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)EBO
VCEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
MIN
150
5
TYP.
MAX
UNIT
V
IC=50mA ;IB=0
IE=1mA ;IC=0
V
IC=5A ;IB=0.5A
VCB=150V; IE=0
VEB=5V; IC=0
2.0
0.1
0.1
V
mA
mA
IEBO
hFE-1
DC current gain
IC=1A ; VCE=5V
IC=5A ; VCE=5V
IC=1A ; VCE=5V
IE=0 ;f=1MHz;VCB=10V
100
20
hFE-2
DC current gain
fT
Transition frequency
7
MHz
pF
COB
Collector output capacitance
160
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD728
PACKAGE OUTLINE
Fig.2 outline dimensions
3
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