2SD733KD [ISC]
Transistor;
| 型号： | 2SD733KD |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Transistor 晶体 晶体管 |
| 文件： | 总3页 (文件大小：46K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD733 2SD733K
DESCRIPTION
·With TO-3 package
·Complement to type 2SB697/697K
·High power dissipation
APPLICATIONS
·Power amplifier applications
·Recommended for high-power high-fidelity
audio frequency amplifier output stage
PINNING(see Fig.2)
PIN
1
DESCRIPTION
Base
2
Emitter
Fig.1 simplified outline (TO-3) and symbol
3
Collector
Absolute maximum ratings(Ta=℃)
SYMBOL
PARAMETER
CONDITIONS
VALUE
160
180
140
160
6
UNIT
2SD733
2SD733K
2SD733
2SD733K
VCBO
Collector-base voltage
Open emitter
V
VCEO
Collector-emitter voltage
Open base
V
VEBO
IC
Emitter-base voltage
Collector current
Open collector
V
A
12
ICM
PC
Tj
Collector current-peak
Collector power dissipation
Junction temperature
Storage temperature
20
A
TC=25℃
100
150
-40~150
W
℃
℃
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD733 2SD733K
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN
140
160
160
180
6
TYP.
MAX
UNIT
2SD733
2SD733K
2SD733
2SD733K
Collector-emitter
breakdown voltage
V(BR)CEO
IC=50mA ;IB=0
V
Collector-emitter
breakdown voltage
V(BR)CBO
IC=5mA ;IE=0
IE=5mA ;IC=0
V
V(BR)EBO
VCEsat
VBE
Emitter-base breakdown voltage
V
V
Collector-emitter saturation voltage IC=6A; IB=0.6A
0.7
2.5
1.5
0.1
0.1
320
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
IC=1A ; VCE=5V
VCB=80V; IE=0
VEB=4V; IC=0
V
ICBO
mA
mA
IEBO
hFE-1
hFE-2
fT
IC=1A ; VCE=-5V
IC=5A ; VCE=5V
IC=1A ; VCE=5V
40
20
DC current gain
Transition frequency
15
MHz
hFE-1 Classifications
C
D
E
F
40-80
60-120
100-200
160-320
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD733 2SD733K
PACKAGE OUTLINE
Fig.2 outline dimensions (unindicated tolerance:±0.1mm)
3
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