2SD1518 [ISC]
Silicon NPN Power Transistor; 硅NPN功率晶体管
| 型号： | 2SD1518 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：224K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD1518
DESCRIPTION
·High Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
·High Switching Speed
APPLICATIONS
·Switching regulator and high voltage switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base voltage
VALUE
UNIT
V
900
400
V
7
V
Collector Current-Continuous
Collector Current-Pulse
Base Current-Continuous
6
10
A
ICM
A
IB
3
A
Collector Power Dissipation
@ TC=25℃
PC
50
W
℃
℃
TJ
Junction Temperature
150
-55~150
Storage Temperature Range
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD1518
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
CONDITIONS
MIN
TYP. MAX UNIT
IC= 2.5A; IB= 0.5A
5.0
1.5
1.0
1.0
V
V
VCE
(sat)
IC= 2.5A; IB= 0.5A
VBE
(sat)
ICBO
VCB= 900V; IE= 0
mA
mA
IEBO
hFE-1
hFE-2
fT
VEB= 7V; IC= 0
IC= 10mA ; VCE= 5V
IC= 0.6A; VCE= 5V
8
DC Current Gain
1
40
Current-Gain—Bandwidth Product
Output Capacitance
IC= 0.1A; VCE= 1V
IE= 0; VCB= 10V; ftest= 1.0MHz
IC= 2.5A; IB1= 0.5A; IB2= -1A
5
MHz
pF
COB
75
Fall Time
0.5
μs
tf
2
isc Website：www.iscsemi.cn
相关型号：
2SD1520(S)TR
Small Signal Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
HITACHI
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