2SD1520(S) [RENESAS]
POWER TRANSISTOR, DPAK-3;
| 型号： | 2SD1520(S) |
| 厂家： | 
RENESAS TECHNOLOGY CORP |
| 描述： | POWER TRANSISTOR, DPAK-3 |
| 文件： | 总5页 (文件大小：37K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD1520(L)/(S)
Silicon NPN Epitaxial
Application
Medium speed power amplifier
Outline
DPAK
4
2, 4
4
1
1
2
3
ID
1. Base
2. Collector
3. Emitter
S Type
1
2.7 kΩ 0.6 kΩ
(Typ) (Typ)
2
4. Collector
3
L Type
3
2SD1520(L)/(S)
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
VCBO
VCEO
VEBO
IC
Rating
Unit
V
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
100
80
V
7
V
4
A
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
C to E diode forward current
Note: 1. Value at TC = 25°C.
IC (peak)
PC*1
Tj
8
A
20
W
°C
°C
A
150
Tstg
ID*1
–55 to +150
4
Electrical Characteristics
(Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Collector to emitter breakdown V(BR)CEO
voltage
80
—
—
V
IC = 25 mA, RBE = ∞
Emitter to base breakdown
voltage
V(BR)EBO
7
—
—
V
IE = 50 mA, IC = 0
Collector cutoff current
ICBO
ICEO
hFE
—
—
100
10
µA
µA
VCB = 80 V, IE = 0
—
—
VCE = 60 V, RBE = ∞
VCE = 3 V, IC = 2 A*1
IC = 2 A, IB = 4 mA*1
IC = 4 A, IB = 40 mA*1
IC = 2 A, IB = 4 mA*1
IC = 4 A, IB = 40 mA*1
ID = 4 A
DC current transfer ratio
1000
—
—
20000
1.5
3.0
2.0
3.5
3.0
—
Collector to emitter saturation VCE (sat)1
—
V
voltage
VCE (sat)2
VBE (sat)1
VBE (sat)2
VD
—
—
V
Base to emitter saturation
voltage
—
—
V
—
—
V
C to E diode forward voltage
Turn on time
—
—
V
Ton
—
0.5
4.5
1.0
µs
µs
µs
IC = 2 A, IB1 = –IB2 = 4 mA
Storage time
Tstg
Tf
—
—
Fall time
—
—
Note: 1. Pulse test.
2
2SD1520(L)/(S)
Maximum Collector Dissipation
Curve
30
20
10
0
50
100
150
Case temperature TC (°C)
Area of Safe Operation
30
iC(peak)
1 µs
10
IC(max)
3
1.0
0.3
0.1
Ta = 25°C
1 shot pulse
0.03
1
2
5
10 20
50 100
Collector to emitter voltage VCE (V)
Typical Output Characteristecs
5
4
3
2
1
0.5 mA
0.4 mA
IB = 0.3 mA
TC = 25°C
0
2
4
6
8
10
Collector to emitter voltage VCE (V)
DC Current Transfer Ratio
vs. Collector Current
30,000
10,000
3,000
1,000
300
100
VCE = 3 V
30
0.1 0.2
0.5 1.0
2
5
10
Collector current IC (A)
3
2SD1520(L)/(S)
Saturation Voltage vs.
Collector Current
100
I
C/IB = 500
30
10
TC = –25°C
VBE(sat)
3
TC = 25°C
1.0
VCE(sat)
TC = 75°C
0.3
0.1
0.1
0.3
1.0
3
10
Collector current IC (A)
Switching Time
vs. Collector Current
30
10
Ta = 25°C
tstg
3
1.0
ton
tf
0.3
0.1
VCC = 30V
C = 500 IB1 = –500 IB2
I
0.03
0.1
0.3
1.0
3
10
Collector current IC (A)
Transient Thermal Resistance
100
30
10
100 ms to 10 s
1 ms to 100 ms
3
1.0
0.3
0.1
TC = 25°C
0.1
1.0
10 (s)
1.0
10
100 (ms)
Time t
4
2SD1520(L)/(S)
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of this document without Hitachi’s permission.
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other reasons during operation of the user’s unit according to this document.
4. Circuitry and other examples described herein are meant merely to indicate the characteristics and
performance of Hitachi’s semiconductor products. Hitachi assumes no responsibility for any
intellectual property claims or other problems that may result from applications based on the
examples described herein.
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or Hitachi, Ltd.
6. MEDICAL APPLICATIONS: Hitachi’s products are not authorized for use in MEDICAL
APPLICATIONS without the written consent of the appropriate officer of Hitachi’s sales company.
Such use includes, but is not limited to, use in life support systems. Buyers of Hitachi’s products are
requested to notify the relevant Hitachi sales offices when planning to use the products in MEDICAL
APPLICATIONS.
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U S A
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5
相关型号：
2SD1520(S)TR
Small Signal Bipolar Transistor, 4A I(C), 80V V(BR)CEO, 1-Element, NPN, Silicon
HITACHI
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