2SD1521 [HITACHI]
Silicon NPN Epitaxial; NPN硅外延
| 型号： | 2SD1521 |
| 厂家： | 
HITACHI SEMICONDUCTOR |
| 描述： | Silicon NPN Epitaxial |
| 文件： | 总6页 (文件大小：37K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
2SD1521
Silicon NPN Epitaxial
Application
Low frequency power amplifier
Outline
TO-126 MOD
2
3
1. Emitter
2. Collector
3. Base
ID
1
2
2 kΩ 0.5 kΩ
(Typ) (Typ)
3
1
Absolute Maximum Ratings (Ta = 25°C)
Item
Symbol
VCEO
VEBO
IC
Rating
Unit
V
Collector to emitter voltage
Emitter to base voltage
Collector current
50
7
V
1.5
A
Collector peak current
Collector power dissipation
Junction temperature
Storage temperature
C to E diode forward current
Note: 1. Value at TC = 25°C.
IC (peak)
PC
3.0
A
10
W
°C
°C
A
Tj
150
Tstg
ID*1
–55 to +150
1.5
2SD1521
Electrical Characteristics (Ta = 25°C)
Item
Symbol Min
Typ
Max
Unit
Test conditions
Collector to base breakdown
voltage
(Zener breakdown voltage)
V(BR)CBO
[VZ]
50
7
60
70
V
IC = 0.1 mA, IE = 0
Emitter to base breakdown
voltage
V(BR)EBO
—
—
V
IE = 50 mA, IC = 0
Collector cutoff current
DC current transfer ratio
ICEO
hFE
—
—
—
—
—
—
—
—
0.5
2.0
10
µA
VCE = 50 V, RBE = ∞
VCE = 3 V, IC = 1 A*1
IC = 1 A, IB = 1 mA*1
IC = 1.5 A, IB = 1.5 mA*1
IC = 1 A, IB = 1 mA*1
IC = 1.5 A, IB = 1.5 mA*1
ID = 1.5 A
2000
—
30000
1.5
2.0
2.0
2.5
3.0
—
Collector to emitter saturation VCE (sat)1
V
voltage
VCE (sat)2
VBE (sat)1
VBE (sat)2
VD
—
V
Base to emitter saturation
voltage
—
V
—
V
C to E diode forward voltage
Turn on time
—
V
Ton
—
µs
µs
IC = 1 A, IB1 = –IB2 = 1 mA
Turn off time
Toff
—
—
Note: 1. Pulse test.
Maximum Collector Dissipation Curve
Area of Safe Operation
15
10
5
10
iC (peak)
1 µs
3
IC (max)
100 µs
1.0
0.3
0.1
0.03
0.01
Ta = 25°C
1 shot pulse
0
50
100
150
3
10
30
100
300
Case temperature TC (°C)
Collector to emitter voltage VCE (V)
2
2SD1521
DC Current Transfer Ratio
vs. Collector Current
Typical Output Characteristics
5
4
3
2
1
30,000
10,000
3,000
1,000
25
300
100
VCE = 3 V
TC = 25°C
IB = 0
6
30
0.03
0
2
4
8
10
0.1
0.3
1.0
3
Collector to emitter voltage VCE (V)
Collector current IC (A)
Saturation Voltage vs. Collector Current
Switching Time vs. Collector Current
10
1.0
10
tstg
3
VBE (sat)
1.0
VCE (sat)
ton
tf
0.3
0.1
200
lC/lB = 500
0.1
Ta = 25°C
VCC = 30 V
0.03
0.01
Ta = 25°C
Pulse test
I
C = 500 IB1 = –500 IB2
0.3 1.0
Collector current IC (A)
0.01
0.03
0.1
0.3 1.0
3
0.03
0.1
3
Collector current IC (A)
3
2SD1521
Transient Thermal Resistance
100
30
10
3
1.0
0.3
0.1
TC = 25°C
0.1
1.0
1.0
10
10
100 (s)
100 (ms)
0.1
Time t
4
Unit: mm
8.0 ± 0.5
2.7 ± 0.4
+0.15
φ
3.1–0.1
120°
1.1
0.8
2.29 ± 0.5
2.29 ± 0.5 0.55
1.2
Hitachi Code
JEDEC
EIAJ
TO-126 Mod
—
—
Weight (reference value) 0.67 g
Cautions
1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,
copyright, trademark, or other intellectual property rights for information contained in this document.
Hitachi bears no responsibility for problems that may arise with third party’s rights, including
intellectual property rights, in connection with use of the information contained in this document.
2. Products and product specifications may be subject to change without notice. Confirm that you have
received the latest product standards or specifications before final design, purchase or use.
3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,
contact Hitachi’s sales office before using the product in an application that demands especially high
quality and reliability or where its failure or malfunction may directly threaten human life or cause risk
of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,
traffic, safety equipment or medical equipment for life support.
4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly
for maximum rating, operating supply voltage range, heat radiation characteristics, installation
conditions and other characteristics. Hitachi bears no responsibility for failure or damage when used
beyond the guaranteed ranges. Even within the guaranteed ranges, consider normally foreseeable
failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-
safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other
consequential damage due to operation of the Hitachi product.
5. This product is not designed to be radiation resistant.
6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without
written approval from Hitachi.
7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor
products.
Hitachi, Ltd.
Semiconductor & Integrated Circuits.
Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan
Tel: Tokyo (03) 3270-2111 Fax: (03) 3270-5109
URL
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For further information write to:
Hitachi Semiconductor
(America) Inc.
Hitachi Europe GmbH
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Copyright ' Hitachi, Ltd., 1999. All rights reserved. Printed in Japan.
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