2SD1485 [ISC]
Silicon NPN Power Transistor; 硅NPN功率晶体管
| 型号： | 2SD1485 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：227K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD1485
DESCRIPTION
·Low Collector Saturation Voltage-
: VCE(sat)= 2.0V(Max)@IC= 3A
·Wide Area of Safe Operation
·Complement to Type 2SB1054
APPLICATIONS
·Designed for high power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
UNIT
100
V
V
V
A
A
100
5
Collector Current-Continuous
Collector Current-Peak
5
ICM
8
3
Collector Power Dissipation
@ Ta=25℃
PC
W
Collector Power Dissipation
@ TC=25℃
60
TJ
Junction Temperature
150
℃
℃
Storage Temperature Range
-55~150
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SD1485
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Saturation Voltage
Base-Emitter On Voltage
Collector Cutoff Current
Emitter Cutoff Current
DC Current Gain
CONDITIONS
MIN
TYP. MAX UNIT
IC= 3A; IB= 0.3A
2.0
1.8
50
V
VCE
(sat)
(on)
IC= 3A; VCE= 5V
V
VBE
ICBO
VCB= 100V; IE= 0
VEB= 3V; IC= 0
μA
μA
IEBO
hFE-1
hFE-2
hFE-3
COB
fT
50
IC= 20mA; VCE= 5V
IC= 1A; VCE= 5V
20
40
20
DC Current Gain
200
DC Current Gain
IC= 3A; VCE= 5V
Output Capacitance
IE= 0; VB= 10V; f= 1.0MHz
IC= 0.5A; VCE= 5V
170
20
pF
Current-Gain—Bandwidh Product
MHz
hFE-2 Classifications
R
Q
P
40-80
60-120
100-200
2
isc Website：www.iscsemi.cn
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