2SD1485P [ETC]
TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 5A I(C) | TO-247VAR ; 晶体管| BJT | NPN | 100V V（ BR ） CEO | 5A I（C ） | TO- 247VAR\n
| 型号： | 2SD1485P |
| 厂家： | 
ETC |
| 描述： | TRANSISTOR | BJT | NPN | 100V V(BR)CEO | 5A I(C) | TO-247VAR
|
| 文件： | 总3页 (文件大小：47K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Power Transistors
2SD1485
Silicon NPN triple diffusion planar type
For high power amplification
Complementary to 2SB1054
Unit: mm
15.0±0.3
11.0±0.2
5.0±0.2
Features
3.2
■
●
Extremely satisfactory linearity of the forward current transfer
ratio hFE
φ3.2±0.1
2.0±0.2
●
Wide area of safe operation (ASO)
High transition frequency fT
Full-pack package which can be installed to the heat sink with
●
●
2.0±0.1
0.6±0.2
one screw
1.1±0.1
Absolute Maximum Ratings (T =25˚C)
■
C
5.45±0.3
10.9±0.5
Parameter
Symbol
VCBO
VCEO
VEBO
ICP
Ratings
Unit
V
1
2
3
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
100
100
V
1:Base
2:Collector
3:Emitter
5
V
8
A
TOP–3 Full Pack Package(a)
IC
5
A
Collector power TC=25°C
60
PC
W
dissipation
Ta=25°C
3
Junction temperature
Storage temperature
Tj
150
˚C
˚C
Tstg
–55 to +155
Electrical Characteristics (T =25˚C)
■
C
Parameter
Symbol
ICBO
IEBO
hFE1
Conditions
min
typ
max
50
Unit
µA
Collector cutoff current
Emitter cutoff current
VCB = 100V, IE = 0
VEB = 3V, IC = 0
50
µA
VCE = 5V, IC = 20mA
VCE = 5V, IC = 1A
20
60
20
*
Forward current transfer ratio
Base to emitter voltage
hFE2
hFE3
VBE
200
VCE = 5V, IC = 3A
VCE = 5V, IC = 3A
1.8
2
V
V
Collector to emitter saturation voltage VCE(sat)
IC = 3A, IB = 0.3A
Transition frequency
fT
VCE = 5V, IC = 0.5A, f = 1MHz
VCB = 10V, IE = 0, f = 1MHz
20
90
MHz
pF
Collector output capacitance
Cob
*hFE2 Rank classification
Rank
hFE2
Q
P
60 to 120
100 to 200
1
Power Transistors
2SD1485
PC — Ta
IC — VCE
IC — VBE
80
10
8
8
7
6
5
4
3
2
1
0
TC=25˚C
VCE=5V
(1) TC=Ta
(2) With a 100 × 100 × 2mm
Al heat sink
(3) Without heat sink
(PC=3.0W)
70
25˚C
–25˚C
(1)
60
50
40
30
20
10
0
TC=100˚C
IB=100mA
80mA
6
60mA
4
40mA
20mA
(2)
(3)
2
10mA
0
0
20 40 60 80 100 120 140 160
0
2
4
6
8
10
12
0
0.4
0.8
1.2
1.6
2.0
(
)
( )
V
( )
Base to emitter voltage VBE V
Ambient temperature Ta ˚C
Collector to emitter voltage VCE
VCE(sat) — IC
hFE — IC
fT — IC
100
10000
1000
IC/IB=10
VCE=5V
VCE=5V
f=1MHz
TC=25˚C
30
10
3000
300
100
1000
25˚C
TC=100˚C
–25˚C
3
1
300
100
30
10
25˚C
0.3
0.1
30
10
3
1
TC=100˚C
–25˚C
0.03
0.01
3
1
0.3
0.1
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
0.01 0.03
0.1
0.3
1
3
10
( )
A
( )
A
( )
Collector current IC A
Collector current IC
Collector current IC
Area of safe operation (ASO)
Rth(t) — t
100
103
102
10
Non repetitive pulse
TC=25˚C
(1) PT=10V × 0.3A (3W) and without heat sink
(2) PT=10V × 1.0A (10W) and with a 100 × 100 × 2mm Al heat sink
30
10
ICP
IC
(1)
(2)
t=1ms
3
1
10ms
DC
0.3
0.1
1
0.03
0.01
10–1
1
3
10
30
100 300 1000
10–3
10–2
10–1
1
10
102
103
104
( )
V
( )
s
Collector to emitter voltage VCE
Time
t
2
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2001 MAR
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