2SD1486 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SD1486 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总4页 (文件大小：140K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1486
DESCRIPTION
·
·With TO-3PFa package
·Complement to type 2SB1055
·High transition frequency fT
·Satisfactory linearity of hFE
·Wide area of safe operation
APPLICATIONS
·For high power amplifier applications
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
3
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
UNIT
120
V
V
V
A
A
Open base
120
Open collector
5
6
10
ICP
Collector current-peak
TC=25℃
70
PC
Collector power dissipation
W
3
Tj
Junction temperature
Storage temperature
150
-55~150
℃
℃
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1486
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEsat
VBE
PARAMETER
Collector-emitter saturation voltage
Base-emitter on voltage
Collector cut-off current
Emitter cut-off current
DC current gain
CONDITIONS
MIN
TYP.
MAX
2.0
1.8
50
UNIT
V
IC=4A ;IB=0.4A
IC=4A ; VCE=5V
VCB=120V; IE=0
VEB=3V; IC=0
V
ICBO
μA
μA
IEBO
50
hFE-1
hFE -2
hFE -3
COB
IC=20mA ; VCE=5V
IC=1A ; VCE=5V
IC=4A ; VCE=5V
IE=0 ; VCB=10V;f=1MHz
IC=0.5A ; VCE=-5V
20
40
20
DC current gain
200
DC current gain
Output capacitance
230
20
pF
fT
Transition frequency
MHz
hFE-2 classifications
R
Q
P
40-80
60-120
100-200
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1486
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.30mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SD1486
4
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