2SD1126 [ISC]
Silicon NPN Darlington Power Transistor; 硅NPN达林顿功率晶体管型号: | 2SD1126 |
厂家: | INCHANGE SEMICONDUCTOR COMPANY LIMITED |
描述: | Silicon NPN Darlington Power Transistor |
文件: | 总2页 (文件大小:228K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
2SD1126
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 120V(Min)
·High DC Current Gain
: hFE= 1000(Min) @IC= 5A
·Low Saturation Voltage
APPLICATIONS
·Designed for power switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emter Voltage
Emitter-Base Voltage
VALUE
120
120
7
UNIT
V
V
V
Collector Current-Continuous
Collector Current-Peak
10
A
ICP
15
A
Collector Power Dissipation
@ TC=25℃
PC
50
W
℃
℃
TJ
Junction Temperature
150
-55~150
Storage Temperature Range
Tstg
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Darlington Power Transistor
2SD1126
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
V(BR)EBO
VCE(
PARAMETER
CONDITIONS
IC= 25mA; RBE= ∞
IE= 200mA; IC= 0
IC= 5A; IB= 10mA
IC= 10A; IB= 0.1A
IC= 5A; IB= 10mA
IC= 10A; IB= 0.1A
VCB= 120V; IE=0
VCE= 100V; RB= ∞
IC= 5A; VCE= 3V
IF= 10A
MIN
120
7
TYP.
MAX
UNIT
V
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
V
1.5
3.0
V
)-1
)-2
)-1
)-2
sat
sat
sat
sat
V
VCE(
VBE(
VBE(
2.0
V
3.5
V
ICBO
ICEO
hFE
100
10
μA
μA
Collector Cutoff Current
DC Current Gain
1000
20000
3.0
VECF
C-E Diode Forward Voltage
V
Switching times
Turn-on Time
0.8
8.0
μs
μs
ton
IC= 5A, IB1= -IB2= 10mA
Turn-Off Time
toff
2
isc Website:www.iscsemi.cn
相关型号:
2SD1128
NPN SILICON DARLINGTON TRANSISTOR(SWITCHING REGULATORS PWM INVERTERS SOLENOID AND RELAY DRIVERS)
Wing Shing
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