2SC5149 [ISC]
isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管
| 型号： | 2SC5149 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | isc Silicon NPN Power Transistor |
| 文件： | 总3页 (文件大小：276K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC5149
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1500V (Min)
·High Switching Speed
·Low Saturation Voltage
·Built-in Damper Diode
APPLICATIONS
·Horizontal deflection output for medium resolution display
color TV
·High speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
UNIT
V
1500
600
V
5
V
Collector Current- Continuous
Collector Current-Pulse
Base Current- Continuous
8
16
A
ICP
A
IB
4
A
Collector Power Dissipation
@ TC=25℃
PC
50
W
℃
℃
TJ
Junction Temperature
150
-55~150
Storage Temperature Range
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC5149
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
Emitter-Base Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
CONDITIONS
MIN
TYP. MAX UNIT
V(BR)EBO
IE= 400mA ; IC= 0
5
V
IC= 5A; IB= 1.3A
IC= 5A; IB= 1.3A
VCB= 1500V ; IE= 0
VEB= 5V ; IC= 0
5.0
1.5
1.0
200
25
V
V
VCE
(sat)
VBE
(sat)
ICBO
mA
mA
IEBO
hFE-1
hFE-2
VECF
fT
Emitter Cutoff Current
66
8
DC Current Gain
IC= 1A ; VCE= 5V
IC= 5A ; VCE= V
IF= 5A
DC Current Gain
3.8
8.0
1.8
C-E Diode Forward Voltage
Current-Gain—Bandwidth Product
Output Capacitance
V
IC= 0.1A ; VCE= 10V
IE=0 ; VCB=10V; ftest=1.0MHz
2
MHz
pF
COB
110
Switching times
Storage Time
6.0
0.5
μs
μs
tstg
ICP= 5A, IB1( )= 1.1A ;
fH= 31.5kHz
end
Fall Time
tf
2
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC5149
isc Website：www.iscsemi.cn
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