2SC5150 [ISC]
isc Silicon NPN Power Transistor; ISC的硅NPN功率晶体管型号: | 2SC5150 |
厂家: | INCHANGE SEMICONDUCTOR COMPANY LIMITED |
描述: | isc Silicon NPN Power Transistor |
文件: | 总3页 (文件大小:277K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC5150
DESCRIPTION
·High Breakdown Voltage-
: VCBO= 1700V (Min)
·High Switching Speed
·Low Saturation Voltage
APPLICATIONS
·Horizontal deflection output for high resolution display,
color TV
·High speed switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
VALUE
1700
70
5
UNIT
V
V
V
Collector Current-Continuous
Collector Current-Pulse
Base Current- Continuous
10
A
ICP
20
A
IB
5
A
Collector Power Dissipation
@ TC=25℃
PC
50
W
℃
℃
TJ
Junction Temperature
150
-55~150
Storage Temperature Range
Tstg
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC5150
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
CONDITIONS
MIN
TYP. MAX UNIT
V(BR)CEO
IC= 10mA; IB= 0
700
V
IC= 6A; IB= 1.5A
3.0
1.2
1.0
10
V
V
VCE
(sat)
IC= 6A; IB= 1.5A
VBE
(sat)
ICBO
VCB= 1700V ; IE= 0
VEB= 5V ; IC= 0
mA
μA
IEBO
hFE-1
hFE-2
fT
Emitter Cutoff Current
DC Current Gain
IC= 1A ; VCE= 5V
10
4
28
DC Current Gain
IC= 6A ; VCE= V
8.5
Current-Gain—Bandwidth Product
Output Capaitance
IC= 0.1A ; VCE= 10V
IE= 0 ; VCB= 10V; ftest= 1.0MHz
2
MHz
pF
COB
185
Switching times
Storage Time
4.0
0.3
μs
μs
tstg
ICP= 5A; IB1( )= 1.0A; fH= 64kHz
end
Fall Time
tf
2
isc Website:www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC5150
isc Website:www.iscsemi.cn
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