2SC5150 [SAVANTIC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC5150 |
| 厂家： | 
Savantic, Inc. |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总4页 (文件大小：283K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5150
DESCRIPTION
·With TO-3P(H)IS package
·High speed
·High voltage
·Low saturation voltage
APPLICATIONS
·Horizontal deflection output for high
resolution display,colorTV
·High speed switching applications
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-3P(H)IS) and symbol
3
Absolute maximum ratings(Ta=25ꢀ )
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
1700
700
5
UNIT
V
Open base
V
Open collector
V
10
A
ICM
Collector current-Peak
Base current
20
A
IB
5
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25ꢀ
50
W
ꢀ
Tj
150
-55~150
Tstg
ꢀ
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5150
CHARACTERISTICS
Tj=25ꢀ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBEsat
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter breakdown voltage IC=10mA ;IB=0
700
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
IC=6A ;IB=1.5A
3
V
IC=6A ;IB=1.5A
0.9
1.2
1
V
VCB=1700V; IE=0
VEB=5V; IC=0
mA
µA
IEBO
10
28
8.5
hFE-1
DC current gain
IC=1A ; VCE=5V
IC=6A ; VCE=5V
IE=0 ; VCB=10V,f=1MHz
IE=0.1A ; VCE=10V
10
4
hFE-2
DC current gain
Cob
Collector output capacitance
Transition frequency
185
2
pF
fT
MHz
Switching times (inductive load)
ts
tf
Storage time
Fall time
2.5
4
µs
µs
ICP=5A;IB1(end) =1A
fH=64kHz
0.15
0.3
2
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5150
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm)
3
SavantIC Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC5150
4
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