2SC4296 [ISC]
Silicon NPN Power Transistor; 硅NPN功率晶体管
| 型号： | 2SC4296 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistor |
| 文件： | 总2页 (文件大小：228K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC4296
DESCRIPTION
·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= 400V(Min)
·High Switching Speed
APPLICATIONS
·Designed for switching regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-Base Voltage
Collector-Emtter Voltage
Emitter-Base Voltage
VALUE
50
400
10
UNIT
V
V
V
Collector Current-Continuous
Collector Current-Peak
Base Current-Continuous
10
A
ICM
20
A
IB
4
A
Collector Power Dissipation
@TC=25℃
PC
75
W
℃
℃
Junction Temperature
Storage Temperature
150
-55~150
TJ
Tstg
isc Website：www.iscsemi.cn
INCHANGE Semiconductor
isc Product Specification
isc Silicon NPN Power Transistor
2SC4296
ELECTRICAL CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
Collector-Emitter Breakdown Voltage
Collector-Emitter Saturation Voltage
Base-Emitter Saturation Voltage
Collector Cutoff Current
CONDITIONS
MIN
TYP. MAX UNIT
V(BR)CEO
IC= 25mA; IB= 0
400
V
IC= 6A; IB= 1.2A
0.5
1.3
100
100
30
V
VCE
(sat)
IC= 6A; IB= 1.2A
V
VBE
(sat)
ICBO
VCB= 500V; IE= 0
VEB= 10V; IC= 0
μA
μA
IEBO
hFE
COB
fT
Emitter Cutoff Current
DC Current Gain
IC= 6A; VCE= 4V
10
Output Capacitance
IE= 0; VCB= 10V; f= 1MH
E= -0.7A; VCE= 12V
85
10
pF
Current-Gain—Bandwidth Product
MHz
Switching Times
Turn-On Time
1.0
3.0
0.5
μs
μs
μs
ton
tstg
tf
IC= 6A; IB1= 0.6A; IB2= -1.2A;
Storage Time
Fall Time
VCC= 200V; RL= 33Ω
2
isc Website：www.iscsemi.cn
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