2SC4297 [ALLEGRO]

Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PF, 3 PIN;
2SC4297
型号: 2SC4297
厂家: ALLEGRO MICROSYSTEMS    ALLEGRO MICROSYSTEMS
描述:

Power Bipolar Transistor, 12A I(C), 400V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin, TO-3PF, 3 PIN

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2 S C4 2 9 7  
Silicon NPN Triple Diffused Planar Transistor (High Voltage and High Speed Switchihg Transistor)  
Application : Switching Regulator and General Purpose  
External Dimensions FM100(TO3PF)  
(Ta=25°C)  
Absolute maximum ratings (Ta=25°C)  
Electrical Characteristics  
Symbol  
VCBO  
VCEO  
VEBO  
IC  
Unit  
2SC4297  
2SC4297  
Symbol  
Conditions  
Unit  
µA  
µA  
V
±0.2  
5.5  
±0.2  
15.6  
±0.2  
3.45  
V
100max  
100max  
400min  
10 to 30  
0.5max  
1.3max  
10typ  
500  
400  
ICBO  
VCB=500V  
V
IEBO  
VEB=10V  
V
V(BR)CEO  
hFE  
IC=25mA  
10  
±0.2  
ø3.3  
A
VCE=4V, IC=7A  
IC=7A, IB=1.4A  
IC=7A, IB=1.4A  
VCE=12V, IE=1A  
VCB=10V, f=1MHz  
12(Pulse24)  
4
a
b
IB  
VCE(sat)  
VBE(sat)  
fT  
V
V
A
PC  
W
°C  
°C  
75(Tc=25°C)  
150  
1.75  
0.8  
Tj  
MHz  
pF  
2.15  
+0.2  
Tstg  
105typ  
COB  
–55 to +150  
1.05  
-0.1  
+0.2  
±0.1  
1.5  
±0.1  
0.65  
-0.1  
5.45  
5.45  
1.5  
3.35  
Typical Switching Characteristics (Common Emitter)  
4.4  
C
Weight : Approx 6.5g  
a. Type No.  
b. Lot No.  
VBB2  
(V)  
IB1  
(A)  
ton  
(µs)  
VCC  
(V)  
RL  
()  
IC  
(A)  
VBB1  
(V)  
IB2  
(A)  
tstg  
(µs)  
tf  
(µs)  
B
E
–5  
0.7  
1max  
200  
28.5  
7
10  
–1.4  
3max  
0.5max  
IC VCE Characteristics (Typical)  
VCE(sat),VBE(sat) IC Temperature Characteristics (Typical)  
IC VBE Temperature Characteristics (Typical)  
(IC/IB=5)  
(VCE=4V)  
12  
12  
10  
8
10  
8
VBE(sat)  
1
6
6
4
4
IB=100mA  
2
2
VCE(sat)  
0
0.02 0.05 0.1  
0
0
0
1
2
3
4
0.5  
1
5
10  
0
0.2  
0.4  
0.6  
0.8  
1.0  
1.2  
Collector-Emitter Voltage VCE(V)  
Base-Emittor Voltage VBE(V)  
Collector Current IC(A)  
hFE IC Characteristics (Typical)  
tontstgtf IC Characteristics (Typical)  
θ
j-a t Characteristics  
(VCE=4V)  
2
8
5
50  
125˚C  
–30˚C  
tstg  
1
VCC 200V  
IC:IB1:–IB2=10:1:2  
0.5  
1
0.5  
ton  
10  
5
tf  
0.1  
0.5  
0.1  
1
10  
100  
1000  
1
5
10  
0.02 0.05 0.1  
0.5  
1
5
10 12  
Collector Current IC(A)  
Time t(ms)  
Collector Current IC(A)  
Safe Operating Area (Single Pulse)  
Reverse Bias Safe Operating Area  
Pc Ta Derating  
30  
30  
80  
10  
5
10  
5
60  
40  
1
1
Without Heatsink  
Natural Cooling  
L=3mH  
0.5  
0.5  
Without Heatsink  
Natural Cooling  
20  
–IB2=1A  
Duty:less than 1%  
Without Heatsink  
3.5  
0
0.1  
0.1  
5
5
10  
50 100  
500  
10  
50  
100  
500  
0
50  
100  
150  
Collector-Emitter Voltage VCE(V)  
Collector-Emitter Voltage VCE(V)  
Ambient Temperature Ta(˚C)  
95  

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