2SC4297 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管型号: | 2SC4297 |
厂家: | INCHANGE SEMICONDUCTOR COMPANY LIMITED |
描述: | Silicon NPN Power Transistors |
文件: | 总4页 (文件大小:180K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4297
DESCRIPTION
·With TO-3PML package
·High voltage ,high speed switching
APPLICATIONS
·For switching regulator and general
purpose applications
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
Fig.1 simplified outline (TO-3PML) and symbol
3
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
Open emitter
VALUE
500
400
10
UNIT
V
Open base
V
Open collector
V
12
A
ICM
Collector current-peak
Base current
24
A
IB
4
A
PC
Collector power dissipation
Junction temperature
Storage temperature
TC=25℃
75
W
℃
℃
Tj
150
-55~150
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4297
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
MIN
TYP.
MAX
UNIT
V
IC=25mA; IB=0
400
IC=7A;IB=1.4A
IC=7A;IB=1.4A
VCB=500V ;IE=0
VEB=10V; IC=0
IC=7A ; VCE=4V
IE=-1A ; VCE=12V
VCB=10V;f=1MHz
0.5
1.3
100
100
30
V
V
μA
μA
IEBO
hFE
DC current gain
10
fT
Transition frequency
10
MHz
pF
COB
Output capacitance
105
Switching times
ton
tstg
tf
Turn-on time
1.0
3.0
0.5
μs
μs
μs
IC=7A;IB1=0.7A;
IB2=-1.4A;RL=28.5Ω
VCC=200V
Storage time
Fall time
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4297
PACKAGE OUTLINE
Fig.2 Outline dimensions
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC4297
4
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