2SC3693L [ISC]
Transistor;![2SC3693L](http://pdffile.icpdf.com/pdf2/p00265/img/icpdf/2SC3693M_1593492_icpdf.jpg)
型号: | 2SC3693L |
厂家: | ![]() |
描述: | Transistor |
文件: | 总3页 (文件大小:129K) |
中文: | 中文翻译 | 下载: | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3693
DESCRIPTION
·
·With TO-220Fa package
·Large current ,high speed
·Low collector saturation voltage
APPLICATIONS
·For use in drivers such as DC/DC
converters and actuators
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
3
Absolute maximum ratings(Ta=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
CONDITIONS
VALUE
100
60
UNIT
V
Open emitter
Open base
V
Open collector
7
V
10
A
ICM
Collector current-peak
Base current
20
A
IB
5.0
A
Ta=25℃
TC=25℃
2
PT
Total power dissipation
W
30
Junction temperature
Storage temperature
150
-55~150
℃
℃
Tj
Tstg
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3693
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
VCEO(SUS)
VCEsat-1
VCEsat-2
VBEsat-1
VBEsat-2
ICBO
PARAMETER
CONDITIONS
MIN
TYP.
MAX
UNIT
V
Collector-emitter sustaining voltage IC=6A; IB=0.6A,L=1mH
Collector-emitter saturation voltage IC=6A; IB=0.3A
Collector-emitter saturation voltage IC=8A; IB=0.4A
60
0.3
0.5
1.2
1.5
10
V
V
Base-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Collector cut-off current
Emitter cut-off current
DC current gain
IC=6A; IB=0.3A
IC=8A; IB=0.4A
VCB=60V; IE=0
V
V
μA
V
CE=60V; VBE=-1.5V
Ta=125℃
10
1.0
μA
mA
ICEX
IEBO
VEB=5V; IC=0
10
μA
hFE-1
IC=1A ; VCE=2V
100
100
60
hFE-2
DC current gain
IC=2A ; VCE=2V
200
400
hFE-3
DC current gain
IC=6A ; VCE=2V
COB
Output capacitance
IE=0; VCB=10V;f=1MHz
IC=1.0A ; VCE=10V
150
140
pF
fT
Transition frequency
MHz
Switching times
ton Turn-on time
ts
0.3
1.5
0.3
μs
μs
μs
IC=6A;RL=8.3Ω
IB1=-IB2=0.3A
Storage time
Fall time
V
CC≈50V
tf
hFE-2 classifications
M
L
K
100-200 150-300 200-400
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3693
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
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