2SC3693L [ISC]

Transistor;
2SC3693L
型号: 2SC3693L
厂家: INCHANGE SEMICONDUCTOR COMPANY LIMITED    INCHANGE SEMICONDUCTOR COMPANY LIMITED
描述:

Transistor

文件: 总3页 (文件大小:129K)
中文:  中文翻译
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Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SC3693  
DESCRIPTION  
·
·With TO-220Fa package  
·Large current ,high speed  
·Low collector saturation voltage  
APPLICATIONS  
·For use in drivers such as DC/DC  
converters and actuators  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Collector  
Emitter  
3
Absolute maximum ratings(Ta=25)  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
VALUE  
100  
60  
UNIT  
V
Open emitter  
Open base  
V
Open collector  
7
V
10  
A
ICM  
Collector current-peak  
Base current  
20  
A
IB  
5.0  
A
Ta=25  
TC=25℃  
2
PT  
Total power dissipation  
W
30  
Junction temperature  
Storage temperature  
150  
-55~150  
Tj  
Tstg  
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SC3693  
CHARACTERISTICS  
Tj=25unless otherwise specified  
SYMBOL  
VCEO(SUS)  
VCEsat-1  
VCEsat-2  
VBEsat-1  
VBEsat-2  
ICBO  
PARAMETER  
CONDITIONS  
MIN  
TYP.  
MAX  
UNIT  
V
Collector-emitter sustaining voltage IC=6A; IB=0.6A,L=1mH  
Collector-emitter saturation voltage IC=6A; IB=0.3A  
Collector-emitter saturation voltage IC=8A; IB=0.4A  
60  
0.3  
0.5  
1.2  
1.5  
10  
V
V
Base-emitter saturation voltage  
Base-emitter saturation voltage  
Collector cut-off current  
Collector cut-off current  
Emitter cut-off current  
DC current gain  
IC=6A; IB=0.3A  
IC=8A; IB=0.4A  
VCB=60V; IE=0  
V
V
μA  
V
CE=60V; VBE=-1.5V  
Ta=125℃  
10  
1.0  
μA  
mA  
ICEX  
IEBO  
VEB=5V; IC=0  
10  
μA  
hFE-1  
IC=1A ; VCE=2V  
100  
100  
60  
hFE-2  
DC current gain  
IC=2A ; VCE=2V  
200  
400  
hFE-3  
DC current gain  
IC=6A ; VCE=2V  
COB  
Output capacitance  
IE=0; VCB=10V;f=1MHz  
IC=1.0A ; VCE=10V  
150  
140  
pF  
fT  
Transition frequency  
MHz  
Switching times  
ton Turn-on time  
ts  
0.3  
1.5  
0.3  
μs  
μs  
μs  
IC=6A;RL=8.3Ω  
IB1=-IB2=0.3A  
Storage time  
Fall time  
V
CC50V  
tf  
‹ hFE-2 classifications  
M
L
K
100-200 150-300 200-400  
2
Inchange Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SC3693  
PACKAGE OUTLINE  
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)  
3

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