2SC3694 [SAVANTIC]

Silicon NPN Power Transistors; 硅NPN功率晶体管
2SC3694
型号: 2SC3694
厂家: Savantic, Inc.    Savantic, Inc.
描述:

Silicon NPN Power Transistors
硅NPN功率晶体管

晶体 晶体管
文件: 总3页 (文件大小:127K)
中文:  中文翻译
下载:  下载PDF数据表文档文件
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SC3694  
DESCRIPTION  
·With TO-220Fa package  
·Large current ,high speed  
·Low saturation voltage  
APPLICATIONS  
·For use in drivers such as DC-DC  
converters and actuators.  
PINNING  
PIN  
1
DESCRIPTION  
Base  
2
Collector  
Emitter  
3
Absolute maximum ratings(Ta=25ꢀ )  
SYMBOL  
VCBO  
VCEO  
VEBO  
IC  
PARAMETER  
Collector-base voltage  
Collector-emitter voltage  
Emitter-base voltage  
Collector current  
CONDITIONS  
VALUE  
100  
60  
UNIT  
Open emitter  
Open base  
V
V
V
A
A
A
Open collector  
7
15  
ICM  
Collector current-peak  
Base current  
30  
IB  
7.5  
Ta=25ꢀ  
TC=25ꢀ  
2
PT  
Total power dissipation  
W
30  
Junction temperature  
Storage temperature  
150  
-55~150  
Tj  
Tstg  
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SC3694  
CHARACTERISTICS  
Tj=25ꢀ unless otherwise specified  
SYMBOL  
VCEO(SUS)  
VCE(sat)1  
VCE(sat)2  
VBE(sat)1  
VBE(sat)2  
ICBO  
PARAMETER  
CONDITIONS  
MIN  
TYP.  
MAX  
UNIT  
V
Collector-emitter sustaining voltage IC=8A; IB=0.8A;L=1mH  
Collector-emitter saturation voltage IC=8A ; IB=0.4A  
Collector-emitter saturation voltage IC=12A ; IB=0.6A  
60  
0.3  
0.5  
1.2  
1.5  
10  
V
V
Base-emitter saturation voltage  
Base-emitter saturation voltage  
Collector cut-off current  
Collector cut-off current  
Collector cut-off current  
Collector cut-off current  
Emitter cut-off current  
DC current gain  
IC=8A ; IB=0.4A  
V
IC=12A ; IB=0.6A  
V
VCB=60V;IE=0  
µA  
mA  
µA  
mA  
µA  
ICER  
VCB=60V;RBE=50;Ta=125°C  
VCB=60V; VBE=-1.5V  
VCB=60V; VBE=-1.5V;Ta=125°C  
VEB=5V;IC=0  
1.0  
10  
ICEX1  
ICEX2  
1.0  
10  
IEBO  
hFE-1  
IC=1.5A ; VCE=2V  
100  
100  
60  
hFE-2  
DC current gain  
IC=3.0A ; VCE=2V  
400  
hFE-3  
DC current gain  
IC=8.0A ; VCE=2V  
Cob  
Collector capacitance  
Transition frequency  
VCB=10V;IE=0;f=1.0MHz  
IC=1.5A ; VCE=10V  
180  
120  
pF  
fT  
MHz  
Switching times  
ton Turn-on time  
ts  
0.3  
1.5  
0.3  
µs  
µs  
µs  
IC=8.0A; IB1=-IB2=0.4A  
VCC=50V ,RL=6.3Ω  
Storage time  
Fall time  
tf  
hFE-2 Classifications  
M
L
K
100-120 150-300 200-400  
2
SavantIC Semiconductor  
Product Specification  
Silicon NPN Power Transistors  
2SC3694  
PACKAGE OUTLINE  
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)  
3

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