2SC3299 [ISC]
Silicon NPN Power Transistors; 硅NPN功率晶体管
| 型号： | 2SC3299 |
| 厂家： | 
INCHANGE SEMICONDUCTOR COMPANY LIMITED |
| 描述： | Silicon NPN Power Transistors |
| 文件： | 总4页 (文件大小：204K) |
| 中文： | 中文翻译 | 下载： | 下载PDF数据表文档文件 |
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3299
DESCRIPTION
·
·With TO-220Fa package
·Complement to type 2SA1307
·Low saturation voltage
·High speed switching time
APPLICATIONS
·High current switching applications
PINNING
PIN
1
DESCRIPTION
Base
2
Collector
Emitter
3
Absolute maximum ratings (Tc=25℃)
SYMBOL
VCBO
VCEO
VEBO
IC
PARAMETER
Collector-base voltage
CONDITIONS
Open emitter
VALUE
UNIT
60
V
V
V
A
A
Collector-emitter voltage
Emitter-base voltage
Collector current
Open base
50
Open collector
5
5
IB
Base current
1
20
TC=25℃
Ta=25℃
PC
Collector power dissipation
W
2
Junction temperature
Storage temperature
150
℃
℃
Tj
Tstg
-55~150
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3299
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
V(BR)CEO
VCEsat
VBEsat
ICBO
PARAMETER
Collector-emitter breakdown voltage
Collector-emitter saturation voltage
Base-emitter saturation voltage
Collector cut-off current
Emitter cut-off current
CONDITIONS
IC=10mA , IB=0
MIN
TYP.
MAX
UNIT
V
50
IC=3A; IB=0.15A
IC=3A; IB=0.15A
VCB=50V ;IE=0
0.4
1.2
1.0
1.0
240
V
V
μA
μA
IEBO
VEB=5V; IC=0
hFE-1
DC current gain
IC=1A ; VCE=1V
IC=3A ; VCE=1V
IE=0 ; VCB=10V,f=1MHz
IC=1A ; VCE=4V
70
30
hFE-2
DC current gain
Cob
Output capacitance
80
pF
fT
Transition frequency
120
MHz
Switching times
Turn-on time
0.1
1.0
0.1
μs
μs
μs
ton
ts
IC=3A ;IB1=0.15A
IB2=-0.15A,VCC=30V
RL=10Ω
Storage time
Fall time
tf
hFE-1 Classifications
O
Y
70-140
120-240
2
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3299
PACKAGE OUTLINE
Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm)
3
Inchange Semiconductor
Product Specification
Silicon NPN Power Transistors
2SC3299
4
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